Browse by Fellow

Navan, Ramesh R. ; Panigrahy, Bharati ; Shojaei Baghini, M. ; Bahadur, D. ; Ramgopal Rao, V. (2012) Mobility enhancement of solution-processed Poly(3-Hexylthiophene) based organic transistor using zinc oxide nanostructures Composites Part B: Engineering, 43 (3). pp. 1645-1648. ISSN 1359-8368

Khaderbad, Mrunal A. ; Choi, Youngjin ; Hiralal, Pritesh ; Aziz, Atif ; Wang, Nan ; Durkan, Colm ; Thiruvenkatanathan, Pradyumna ; Amaratunga, Gehan A. J. ; Ramgopal Rao, V. ; Seshia, Ashwin A. (2012) Electrical actuation and readout in a nanoelectromechanical resonator based on a laterally suspended zinc oxide nanowire Nanotechnology, 23 (2). No pp. given. ISSN 0957-4484

Prashanthi, K. ; Naresh, M. ; Seena, V. ; Thundat, T. ; Ramgopal Rao, V. (2011) A novel photoplastic piezoelectric nanocomposite for MEMS applications IEEE/ASME Journal of Microelectromechanical Systems, PP (99). pp. 1-3. ISSN 1057-7157

Surya, Sandeep ; Nag, Sudip ; Fernandes, Avil J. ; Gandhi, Sahir ; Agarwal, Dilip ; Chatterjee, Gaurav ; Ramgopal Rao, V. (2011) Highly sensitive R/R measurement system for nano-electro-mechanical cantilever based bio-sensors IEEE International Symposium on Electronic System Design (ISED) . pp. 34-38.

Gilda, N. A. ; Nag, S. ; Patil, S. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2011) Current excitation method for ΔR measurement in piezo-resistive sensors with a 0.3-ppm resolution Transactions on Instrumentation and Measurement, PP (99). pp. 1-8. ISSN 0018-9456

Gilda, Neena A. ; Patil, Sheetal ; Seena, V. ; Joshi, Sanjay ; Thaker, Viral ; Thakur, Sanket ; Anvesha, A. ; Shojaei Baghini, M. ; Sharma, D. K. ; Ramgopal Rao, V. (2011) Piezoresistive 6-MNA coated microcantilevers with signal conditioning circuits for electronic nose Proceedings of the IEEE Asian Solid-State Circuits Conference (A-SSCC) 2011, Jeju, Korea . pp. 121-124.

Seena, V. ; Fernandes, Avil ; Pant, Prita ; Mukherji, Soumyo ; Ramgopal Rao, V. (2011) Polymer nanocomposite nanomechanical cantilever sensors: material characterization, device development and application in explosive vapour detection Nanotechnology, 22 (29). 295501_1-295501_11. ISSN 0957-4484

Joshi, M. ; Gandhi, P. S. ; Lal, R. ; Rao, V. R. ; Mukherji, S. (2011) Modeling, simulation, and design guidelines for piezoresistive affinity cantilevers Journal of Microelectromechanical Systems, 20 (3). pp. 774-784. ISSN 1057-7157

Shrivastava, M. ; Mehta, R. ; Gupta, S. ; Agarwal, N. ; Baghini, M. S. ; Sharma, D. K. ; Schulz, T. ; Armin, K. ; Molzer, W. ; Gossner, H. ; Rao, V. R. (2011) Toward system on chip (SoC) development using FinFET technology: challenges, solutions, process co-development & optimization guidelines IEEE Transactions on Electron Devices, 58 (6). pp. 1597-1607. ISSN 0018-9383

Asra, R. ; Shrivastava, M. ; Murali, K. V. R. M. ; Pandey, R. K. ; Gossner, H. ; Rao, V. R. (2011) Tunnel FET for VDD scaling below 0.6V with CMOS comparable performance IEEE Transactions on Electron Devices, 58 (7). pp. 1855-1863. ISSN 0018-9383

Seena, V. ; Dudhe, Ravishankar S. ; Raval, Harshil N. ; Patil, Sheetal ; Kumar, Anil ; Mukherji, Soumyo ; Ramgopal Rao, V. (2011) Organic sensor platforms for environmental and security applications Electro-Chemical-Society (ECS) Transactions, 35 (3). pp. 67-77. ISSN 1938-5862

Thakker, Rajesh A. ; Srivastava, Mayank ; Tailor, Ketankumar H. ; Baghini, Maryam Shojaei ; Sharma, Dinesh K. ; Ramgopal Rao, V. ; Patil, Mahesh B. (2011) A novel architecture for improving slew rate in FinFET-based op-amps and OTAs Microelectronics Journal, 42 (5). pp. 758-765. ISSN 0026-2692

Shrivastava, M. ; Agrawal, M. ; Aghassi, J. ; Gossner, H. ; Molzer, W. ; Schulz, T. ; Ramgopal Rao, V. (2011) On the thermal failure in nanoscale devices: insight towards heat transport including critical BEOL and design guidelines for robust thermal management & EOS/ESD reliability 2011 IEEE International Reliability Physics Symposium (IRPS) . 3F.3_1-3F.3_5. ISSN 1541-7026

Pal, A. ; Sachid, A. B. ; Gossner, H. ; Rao, V. R. (2011) Insights into the design and optimization of tunnel-FET devices and circuits IEEE Transactions on Electron Devices, 58 (4). pp. 1045-1053. ISSN 0018-9383

Rajagopal, R. ; Kale, S. N. ; Raorane, N. A. ; Pinto, R. ; Rao, V. R. (2011) Fabrication of La_0.7Sr_0.3MnO₃-Si heterojunctions using a CMOS-compatible citric acid etch process IEEE Electron Device Letters, 32 (3). pp. 402-404. ISSN 0741-3106

Tsutsui, Kazuo ; Kobayashi, Yusuke ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Iwai, Hiroshi (2011) Analysis of threshold voltage variations in fin field effect transistors Key Engineering Materials, 470 . pp. 194-200. ISSN 1013-9826

Ray, Prasenjit ; Seena, V. ; Apte, Prakash R. ; Rao, Ramgopal (2011) High yield polymer MEMS process for CMOS/MEMS integration MRS proceedings, 1299 . pp. 1-5. ISSN 1946-4274

Raval, Harshil N. ; Ramgopal Rao, V. (2011) Ionizing radiation total dose detectors using oligomer organic semiconductor material and devices MRS Proceedings, 1312 . pp. 1-6. ISSN 1946-4274

Prashanthi, K. ; Mandal, M. ; Duttagupta, S. P. ; Ramgopal Rao, V. ; Pant, P. ; Dhale, K. ; Palkar, V. R. (2011) Nanochanical characterization of multiferroic thin films for micro-electromechanical systems International Journal of Nanoscience, 10 (4). pp. 1039-1043. ISSN 0219-581X

Kumar, Anshuman ; Navan, Ramesh R. ; Kushwaha, Ajay ; Aslam, M. ; Ramgopal Rao, V. (2011) Performance enhancement of p-type organic thin film transistors using zinc oxide nanostructures International Journal of Nanoscience, 10 (4-5). pp. 761-764. ISSN 0219-581X

Seena, V. ; Fernandes, Avil ; Mukherji, Soumyo ; Ramgopal Rao, V. (2011) Photoplastic microcantilever sensor platform for explosive detection International Journal of Nanoscience, 10 (4-5). pp. 739-743. ISSN 0219-581X

Dudhe, Ravishankar S. ; Sinha, Jasmine ; Sutar, D. S. ; Kumar, Anil ; Ramgopal Rao, V. (2011) Poly (3-hexylthiophene) and hexafluoro-2-propanol-substituted polysiloxane based OFETs as a sensor for explosive vapor detection Sensors and Actuators A: Physical . ISSN 0924-4247

Ray, P. ; Rao, V. R. ; Apte, P. R. (2010) A 8-resistor SU-8 accelerometer with reduced cross axis sensitivity 2010 IEEE Asia Pacific Conference on Circuits and Systems (APCCS) . pp. 824-826.

Raval, H. N. ; Rao, V. R. (2010) Low-operating-voltage operation and improvement in sensitivity with passivated OFET sensors for determining total dose radiation IEEE Electron Device Letters, 31 (12). pp. 1482-1484. ISSN 0741-3106

Joshi, Manoj ; Ramgopal Rao, V. ; Mukherji, Soumyo (2010) A novel technique for microfabrication of ultra-thin affinity cantilevers for characterization with an AFM Journal of Micromechanics and Microengineering, 20 (12). p. 125007. ISSN 0960-1317

shrivatsava, M. ; Jain, R. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) A solution toward the OFF-state degradation in drain-extended MOS device IEEE Transactions on Electron Devices, 57 (12). pp. 3536-3539. ISSN 0018-9383

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) 3D TCAD base d approach for the evaluation of nanoscale devices during ESD failure 7th International SoC Design Conference (ISOCC 2010) . pp. 268-271.

Sachid, A. B. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2010) Alternate scaling strategies for Multi-Gate FETs for high-performance and low-power applications 7th International SoC Design Conference (ISOCC 2010) . pp. 256-259.

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) On the Transient behavior of various drain extended MOS devices under the ESD stress condition 7th International SoC Design Conference (ISOCC 2010) . pp. 264-267.

Tan, H. S. ; Wang, B. C. ; Kamath, S. ; Chua, J. ; Shijaei-Baghini, M. ; Rao, V. R. ; Mathews, N. ; Mhaisalkar, S. G. (2010) Complementary organic circuits using evaporated F₁₆CuPc and inkjet printing of PQT IEEE Electron Device Letters, 31 (11). pp. 1311-1313. ISSN 0741-3106

Chabukswar, S. ; Maji, D. ; Manoj, C. R. ; Anil, K. G. ; Ramgopal Rao, V. ; Crupi, F. ; Magnone, P. ; Giusi, G. ; Pace, C. ; Collaert, N. (2010) Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs Microelectronic Engineering, 87 (10). pp. 1963-1967. ISSN 0167-9317

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) Part I: On the behavior of STI-type DeNMOS device under ESD conditions IEEE Transactions on Electron Devices, 57 (9). pp. 2235-2242. ISSN 0018-9383

Shrivastava, M. ; Gossner, H. ; Baghini, M. S. ; Rao, V. R. (2010) Part II: On the three-dimensional filamentation and failure modeling of STI type DeNMOS device under various ESD conditions IEEE Transactions on Electron Devices, 57 (9). pp. 2243-2250. ISSN 0018-9383

Ray, P. ; Rao, V. R. ; Apte, P. R. (2010) Optimum design of SU-8 based accelerometer with reduced cross axis sensitivity Proceedings of the 2010 IEEE International Conference on Semiconductor Electronics (ICSE) . pp. 289-292.

Dudhe, Ravishankar S. ; Sinha, Jasmine ; Kumar, Anil ; Ramgopal Rao, V. (2010) Polymer composite-based OFET sensor with improved sensitivity towards nitro based explosive vapors Sensors and Actuators B: Chemical, 148 (1). pp. 158-165. ISSN 0925-4005

Shrivastava, M. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2010) A novel bottom spacer FinFET structure for improved short-channel, power-delay, and thermal performance IEEE Transactions on Electron Devices, 57 (6). pp. 1287-1294. ISSN 0018-9383

Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions Proceedings of the 2010 IEEE International Reliability Physics Symposium (IRPS) . pp. 841-845. ISSN 1541-7026

Shrivastava, M. ; Bychikhin, S. ; Pogany, D. ; Schneider, J. ; Shojaei Baghini, M. ; Gossner, H. ; Gornik, E. ; Ramgopal Rao, V. (2010) On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition IEEE International Reliability Physics Symposium (IRPS), 2010 . pp. 480-484. ISSN 1541-7026

Khaderbad, M. A. ; Roy, U. ; Yedukondalu, M. ; Rajesh, M. ; Ravikanth, M. ; Rao, V. R. (2010) Variable interface dipoles of metallated porphyrin self-assembled monolayers for metal-gate work function tuning in advanced CMOS technologies IEEE Transactions on Nanotechnology, 9 (3). pp. 335-337. ISSN 1536-125X

Sachid, A. B. ; Thakker, R. A. ; Sathe, C. ; Baghini, M. S. ; Sharma, D. K. ; Ramgopal Rao, V. ; Patil, M. B. (2010) Auto-BET-AMS: an automated device and circuit optimization platform to benchmark emerging technologies for performance and variability using an analog and mixed-signal design framework Proceedings of the 11th International Symposium on Quality Electronic Design (ISQED 2010) . pp. 713-720. ISSN 1948-3287

Kobayashi, Yusuke ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Tsutsui, Kazuo ; Iwai, Hiroshi (2010) Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness Microelectronics Reliability, 50 (3). pp. 332-337. ISSN 0026-2714

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part I. Mixed-signal performance of various high-voltage drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 448-457. ISSN 0018-9383

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part I: Mixed-signal performance of various high-voltage drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 448-457. ISSN 0018-9383

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part II. A novel scheme to optimize the mixed-signal performance and hot-carrier reliability of drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 458-465. ISSN 0018-9383

Shrivastava, M. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2010) Part II: A novel scheme to optimize the mixed-signal performance and hot-carrier reliability of drain-extended MOS devices IEEE Transactions on Electron Devices, 57 (2). pp. 458-465. ISSN 0018-9383

Seena, V. ; Rajoriya, A. ; Fernandes, A. ; Dhale, K. ; Pant, P. ; Mukherji, S. ; Rao, V. R. (2010) Fabrication and characterization of novel polymer composite microcantilever sensors for explosive detection Proceedings - IEEE International Conference on Micro Electro Mechanical Systems (MEMS) . pp. 851-854. ISSN 1084-6999

Prashanthi, K. ; Mandal, M. ; Duttagupta, S. P. ; Pant, Prita ; Palkar, V. R. ; Ramgopal Rao, V. (2010) Characterization of multiferroic thin films directly deposited on silicon for novel device applications Proceedings of the 2010 IEEE International NanoElectornics Conference, Hong Kong, China . pp. 900-901.

Manoj, C. R. ; Sachid, A. B. ; Feng, Yuan ; Chang-Yun, Chang ; Rao, V. R. (2010) Impact of fringe capacitance on the performance of nanoscale FinFETs IEEE Electron Device Letters, 31 (1). pp. 83-85. ISSN 0741-3106

Kobayashi, Yusuke ; Tsutsui, Kazuo ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Iwai, Hiroshi (2010) Analysis of threshold voltage variation in fin field effect transistors: separation of short channel effects Japanese Journal of Applied Physics, 49 . 044201_1-044201_6. ISSN 0021-4922

Asra, Ram ; Murali, Kota V. R. M. ; Ramgopal Rao, V. (2010) A binary tunnel field effect transistor with a steep sub-threshold swing and increased ON current Japanese Journal of Applied Physics, 49 (12). 120203_1-120203_3. ISSN 0021-4922

Dudhe, R. S. ; Seena, V. ; Mukherji, S. ; Kumar, A. ; Rao, R. (2009) Organic sensors for explosive detection Proceedings of the International Conference on Computers and Devices for Communication (CODEC) . pp. 1-6.

Shrivastava, M. ; Verma, B. ; Baghini, M. S. ; Russ, C. ; Sharma, D. K. ; Gossner, H. ; Rao, V. R. (2009) Benchmarking the device performance at sub 22 nm node technologies using an SoC framework Proceedings of the International Electron Devices Meeting (IEDM) . pp. 1-4.

Shrivastava, M. ; Bychikhin, S. ; Pogany, D. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Gornik, E. ; Rao, V. R. (2009) Filament study of STI type drain extended NMOS device using transient interferometric mapping Proceedings of the International Electron Devices Meeting (IEDM) . pp. 1-4.

Nag, Sudip ; Kale, N. S. ; Rao, V. R. ; Sharma, D. K. (2009) An ultra-sensitive ΔR/R measurement system for biochemical sensors using piezoresistive micro-cantilevers 31st Annual International Conference of theIEEE Engineering in Medicine and Biology Society (EMBC'09) . pp. 3794-3797. ISSN 1557-170X

Shrivastava, M. ; Schneider, J. ; Jain, R. ; Baghini, M. S. ; Gossner, H. ; Ramgopal Rao, V. (2009) IGBT plugged in SCR device for ESD protection in advanced CMOS technology 31st IEEE Annual InternationaEOS/ESD Symposium, Anaheim, CA, USA . pp. 1-9.

Hariharan, Venkatnarayan ; Thakker, Rajesh ; Singh, Karmvir ; Sachid, Angada B. ; Patil, M. B. ; Vasi, Juzer ; Ramgopal Rao, V. (2009) Drain current model for nanoscale double-gate MOSFETs Solid-State Electronics, 53 (9). pp. 1001-1008. ISSN 0038-1101

Seena, V. ; Rajorya, Anukool ; Pant, Prita ; Mukherji, Soumyo ; Ramgopal Rao, V. (2009) Polymer microcantilever biochemical sensors with integrated polymer composites for electrical detection Solid State Sciences, 11 (9). pp. 1606-1611. ISSN 1293-2558

Kale, Nitin S. ; Joshi, Manoj ; Nageswara Rao, P. ; Mukherji, S. ; Ramgopal Rao, V. (2009) Bio-functionalization of silicon nitride-based piezo-resistive microcantilevers Sadhana (Academy Proceedings in Engineering Sciences), 34 (4). pp. 591-597. ISSN 0256-2499

Thakker, R. A. ; sathe, C. ; Sachid, A. B. ; Shojaei Baghini, M. ; Ramgopal Rao, V. ; Patil, M. B. (2009) A novel table-based approach for design of FinFET circuits IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 28 (7). pp. 1061-1070. ISSN 0278-0070

Govindarajan, A. V. ; Paluri, S. ; Sharma, A. ; Ramgopal Rao, V. ; Bohringer, K. F. (2009) Selective vapor-liquid-solid growth of needle arrays by hotwire chemical vapor deposition with low substrate temperature TRANSDUCERS'09: The 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Denver, Colorado USA . pp. 1079-1082.

Maji, D. ; Crupi, F. ; Magnone, P. ; Giusi, G. ; Pace, C. ; Simoen, E. ; Rao, V. R. (2009) Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India . pp. 1-4.

Navan, R. R. ; Thakker, R. A. ; Tiwari, S. P. ; Baghini, M. S. ; Patil, M. B. ; Mhaisalkar, S. G. ; Rao, V. R. (2009) DC & transient circuit simulation methodologies for organic electronics Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India . pp. 1-4.

Sachid, A. B. ; Kulkarni, G. S. ; Baghini, M. S. ; Sharma, D. K. ; Rao, V. R. (2009) Highly robust nanoscale planar double-gate MOSFET device and SRAM cell immune to gate-misalignment and process variations Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India . pp. 1-4.

Roy, U. ; Khaderbad, M. A. ; Yedukondalu, M. ; Walawalkar, M. G. ; Ravikanth, M. ; Mukherji, S. ; Rao, V. R. (2009) Hydroxy-phenyl Zn(II) porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology Proceedings of the IEEE International Workshop on Electron Devices & Semiconductor Technology, Mumbai, India . pp. 1-5.

Magnone, P. ; Crupi, F. ; Giusi, G. ; Pace, C. ; Simoen, E. ; Claeys, C. ; Pantisano, L. ; Maji, D. ; Rao, V. R. ; Srinivasan, P. (2009) 1/f Noise in drain and gate current of MOSFETs with high-k gate stacks IEEE Transactions on Device and Materials Reliability, 9 (2). pp. 180-189. ISSN 1530-4388

Raval, H. N. ; Tiwari, S. P. ; Navar, R. R. ; Mhaisalkar, S. G. ; Rao, V. R. (2009) Solution-processed bootstrapped organic inverters based on P3HT with a high-k gate dielectric material IEEE Electron Device Letters, 30 (5). pp. 484-486. ISSN 0741-3106

Maji, D. ; Crupi, F. ; Amat, E. ; Simoen, E. ; De Jaeger, B. ; Brunco, D. P. ; Manoj, C. R. ; Rao, V. R. ; Magone, P. ; Guisi, G. ; Pace, C. ; Pantisano, L. ; Mitard, J. ; Rodriguez, R. ; Nafria, M. (2009) Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs IEEE Transactions on Electron Devices, 56 (5). pp. 1063-1069. ISSN 0018-9383

Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2009) Highly resistive body STI NDeMOS: an optimized DeMOS device to achieve moving current filaments for robust ESD protection Proceedings of the 2009 IEEE International Reliability Physics Symposium (IRPS) . pp. 754-759. ISSN 1541-7026

Shrivastava, M. ; Schneider, J. ; Baghini, M. S. ; Gossner, H. ; Rao, V. R. (2009) A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditions Proceedings of the 2009 IEEE International Reliability Physics Symposium (IRPS) . pp. 669-675. ISSN 1541-7026

Raval, Harshil N. ; Tiwari, Shree Prakash ; Navan, Ramesh R. ; Ramgopal Rao, V. (2009) Determining ionizing radiation using sensors based on organic semiconducting material Applied Physics Letters, 94 (12). 123304_1-123304_3. ISSN 0003-6951

Hariharan, V. ; Vasi, J. ; Rao, V. R. (2009) An improvement to the numerical robustness of the surface potential approximation for double-gate MOSFETs IEEE Transactions on Electron Devices, 56 (3). pp. 529-532. ISSN 0018-9383

Hariharan, Venkatnarayan ; Vasi, Juzer ; Ramgopal Rao, V. (2009) A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs Solid-State Electronics, 53 (2). pp. 218-224. ISSN 0038-1101

Kale, N. S. ; Nag, S. ; Pinto, R. ; Rao, V. R. (2009) Fabrication and characterization of a polymeric microcantilever with an encapsulated hotwire CVD polysilicon piezoresistor IEEE/ASME Journal of Microelectromechanical Systems, 18 (1). pp. 79-87. ISSN 1057-7157

Thakker, R. A. ; Sathe, C. ; Sachid, A. B. ; Baghini, M. S. ; Rao, V. R. ; Patil, M. B. (2009) Automated design and optimization of circuits in emerging technologies Proceedings of the 14th Asiaand South Pacific Design Automation Conference" (ASP-DAC 2009), Yokohama, Japan . pp. 504-509.

Walawalkar, Mrinalini G. ; Kottantharayil, Anil ; Ramgopal Rao, V. (2009) Chemical vapor deposition precursors for high dielectric oxides: zirconium and hafnium oxide Synthesis and Reactivity in Inorganic Metal-Organic and Nano-Metal Chemistry, 39 (6). pp. 331-340. ISSN 1553-3174

Naga Siva Kumar, G. ; Mitra, Sushanta K. ; Ramgopal Rao, V. (2009) Fabrication of dielectrophoretic microfluidic device ASME Conference Proceedings . pp. 113-119.

Chawda, Pradeep Kumar ; Anand, Bulusu ; Ramgopal Rao, V. (2009) Optimum body bias constraints for leakage reduction in high-k complementary metal-oxide-semiconductor circuits Japanese Journal of Applied Physics, 48 . 054501_1-054501_3. ISSN 0021-4922

Sachid, A. B. ; Francis, R. ; Baghini, M. S. ; Sharma, D. K. ; Bach, K. -H. ; Mahnkopf, R. ; Rao, V. R. (2008) Sub-20 nm gate length FinFET design: can high-k spacers make a difference? Proceedings of the International Electron Devices Meeting (IEDM) . pp. 1-4.

Shrivastava, M. ; Baghini, M. S. ; Sachid, A. B. ; Sharma, D. K. ; Rao, V. R. (2008) A novel and robust approach for common mode feedback using IDDG FinFET IEEE Transactions on Electron Devices, 55 (11). pp. 3274-3282. ISSN 0018-9383

Kobayashi, Yusuke ; Sachid, Angada B. ; Tsutsui, Kazuo ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Iwai, H. (2008) Analysis of threshold voltage variations of FinFETs relating to short channel effects Electro-Chemical-Society (ECS) Transactions, 16 (40). pp. 23-27. ISSN 1938-5862

Khaderbad, M. A. ; Nayak, K. ; Yedukondalu, M. ; Ravikanth, M. ; Mukherji, S. ; Rao, V. R. (2008) Metallated porphyrin self assembled monolayers as Cu diffusion barriers for the nano-scale CMOS technologies Proceedings of the 8th IEEE Conference on Nanotechnology (IEEE NANO 2008) , Arlington, Texas USA . pp. 167-170.

Kale, N. S. ; Nag, S. ; Pinto, R. ; Rao, V. R. (2008) Photoplastic NEMS with an encapsulated polysilicon piezoresistor Proceedings of the 8th IEEE Conference on Nanotechnology (IEEE NANO 2008), Arlington, Texas USA . pp. 460-463.

Hariharan, V. ; Vasi, J. ; Rao, V. R. (2008) Drain current model including velocity saturation for symmetric double-gate MOSFETs IEEE Transactions on Electron Devices, 55 (8). pp. 2173-2180. ISSN 0018-9383

Manoj, C. R. ; Nagpal, M. ; Varghese, D. ; Rao, V. R. (2008) Device design and optimization considerations for bulk FinFETs IEEE Transactions on Electron Devices, 55 (2). pp. 609-615. ISSN 0018-9383

Tiwari, S. P. ; Srinivas, P. ; Shriram, S. ; Kale, Nitin S. ; Mhaisalkar, S. G. ; Ramgopal Rao, V. (2008) Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric Thin Solid Films, 516 (5). pp. 770-772. ISSN 0040-6090

Sachid, A. B. ; Manoj, C. R. ; Sharma, D. K. ; Rao, V. R. (2008) Gate fringe-induced barrier lowering in underlap FinFET structures and its optimization IEEE Electron Device Letters, 29 (1). pp. 128-130. ISSN 0741-3106

Hariharan, V. ; Thakker, R. ; Patil, M. B. ; Vasi, J. ; Rao, V. R. (2008) Closed form current and conductance model for symmetric double-gate MOSFETs using field-dependent mobility and body doping Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology, 3 . pp. 857-860.

Dudhe, Ravishankar S. ; Tiwari, S. P. ; Raval, Harshil N. ; Khaderbad, Mrunal A. ; Singh, Rahul ; Sinha, Jasmine ; Yedukondalu, M. ; Ravikanth, M. ; Kumar, Anil ; Ramgopal Rao, V. (2008) Explosive vapor sensor using poly (3-hexylthiophene) and Cu^II tetraphenylporphyrin composite based organic field effect transistors Applied Physics Letters, 93 (26). 263306_1-263306_3. ISSN 0003-6951

Maji, Debabrata ; Crupi, Felice ; Giusi, Gino ; Pace, Calogero ; Simoen, Eddy ; Claeys, Cor ; Ramgopal Rao, V. (2008) On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO₂/SiO₂ gate stack Applied Physics Letters, 92 (16). 163508_1-163508_3. ISSN 0003-6951

Hariharan, V. ; Vasi, Juzer ; Ramgopal Rao, V. (2007) Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2 Proceedings of the 2007 International Semiconductor Device Research Symposium (ISDRS), Universit of Maryland, College Park, USA . pp. 1-2.

Rajwade, S. R. ; Kulkarni, P. D. ; Mukherji, S. ; Rao, K. K. ; Ramgopal Rao, V. (2007) Polymerization on DNA templates for nanoelectronics applications Journal of Scanning Probe Microscopy, 2 (1-2). pp. 32-35. ISSN 1557-7937

Kobayashi, Yusuke ; Raghunathan Manoj, C. ; Tsutsui, Kazuo ; Hariharan, Venkanarayan ; Kakushima, Kuniyuki ; Ramgopal Rao, V. ; Ahmet, Parhat ; Iwai, Hiroshi (2007) Parasitic effects in multi-gate MOSFETs IEICE - Transactions on Communications, E90-C (10). pp. 2051-2056. ISSN 0916-8516

Tiwari, S. p. ; Namdas, E. B. ; Ramgopal Rao, V. ; Fichou, D. ; Mhaisalkar, S. G. (2007) Solution-processed n-type organic field-effect transistors with high ON/OFF current ratios based on fullerene derivatives IEEE Electron Device Letters, 28 (10). pp. 880-883. ISSN 0741-3106

Nayak, K. ; Kulkarni, P. D. ; Deepu, A. ; Sitaraman, V. R. ; Punidha, S. ; Saha, A. A. ; Ravikanth, M. ; Mitra, S. K. ; Mukherji, S. ; Ramgopal Rao, V. (2007) Patterned microfluidic channels using self-assembled hydroxy-phenyl porphyrin monolayer Proceedings of the 7th IEEE International Conference on Nanotechnology, Hong Kong . pp. 1235-1239.

Maji, Debabrata ; Duttagupta, S. P. ; Rao, V. R. ; Yeo, Chia Ching ; Cho, Byung-Jin (2007) Border-trap characterization in high-κ strained-Si MOSFETs IEEE Electron Device Letters, 28 (8). pp. 731-733. ISSN 0741-3106

Manoj, C. R. ; Nagpal, M. ; Ramgopal Rao, V. (2007) Improving the DC performance of Bulk FinFETs by optimum body doping Proceedings of the 14th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Bangalore, India . pp. 180-184.

Srinivas, P. ; Tiwari, S. P. ; Raval, H. N. ; Ramesh, R. N. ; Cahyadi, T. ; Mhaisalkar, S. G. ; Rao, V. R. (2007) A simple and direct method for interface characterization of OFETs Proceedings of the 14th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Bangalore, India . pp. 306-309.

Joshi, Manoj ; Kale, Nitin ; Lal, Rakesh ; Ramgopal Rao, V. ; Mukherji, Soumyo (2007) A novel dry method for surface modification of SU-8 for immobilization of biomolecules in Bio-MEMS Biosensors and Bioelectronics, 22 (11). pp. 2429-2435. ISSN 0956-5663

Kobayashi, Yusuke ; Tsutsui, Kazuo ; Kakushima, Kuniyuki ; Hariharan, Venkanarayan ; Ramgopal Rao, V. ; Ahmet, Parhat ; Iwai, Hiroshi (2007) Parasitic effects depending on shape of spacer region on FinFETs Electro-Chemical-Society (ECS) Transactions, 6 (4). pp. 83-87. ISSN 1938-5862

Cahyadi, T. ; Tey, J. N. ; Mhaisalkar, S. G. ; Boey, F. ; Rao, V. R. ; Lal, R. ; Huang, Z. H. ; Qi, G. J. ; Chen, Z. -K. ; Ng, C. M. (2007) Investigations of enhanced device characteristics in pentacene-based field-effect transistors with sol-gel interfacial layer Applied Physics Letters, 90 (12). 122112_1-122112_3. ISSN 0003-6951

Tiwari, S. P. ; Rao, V. R. ; Tan, Huei Shaun ; Namdas, E. B. ; Mhaisalkar, S. G. (2007) Pentacene organic field effect transistors on flexible substrates with polymer dielectrics Proceedings of the 14 th International Symposium on VLSI Technology, Systems, and Applications (2007 VLSI-TSA) . pp. 1-2. ISSN 1930-885X

Joshi, Manoj ; Kale, Nitin ; Mukherji, S. ; Lal, R. ; Ramgopal Rao, V. (2007) Affinity cantilever sensors for cardiac diagnostics Indian Journal of Pure & Applied Physics, 45 . pp. 287-293. ISSN 0019-5596

Manoj, C. R. ; Rao, V. R. (2007) Impact of high-k gate dielectrics on the device and circuit performance of nanoscale FinFETs IEEE Electron Device Letters, 28 (4). pp. 295-297. ISSN 0741-3106

Chakraborty, Saurav ; Mallik, Abhijit ; Sarkar, Chandan Kumar ; Ramgopal Rao, V. (2007) Impact of halo doping on the subthreshold performance of deep-submicrometer CMOS devices and circuits for ultralow power analog/mixed-signal applications IEEE Transactions on Electron Devices, 54 (2). pp. 241-248. ISSN 0018-9383

Joshi, Manoj ; Pinto, Richard ; Ramgopal Rao, V. ; Mukherji, Soumyo (2007) Silanization and antibody immobilization on SU-8 Applied Surface Science, 253 (6). pp. 3127-3132. ISSN 0169-4332

Cahyadi, T. ; Tan, H. S. ; Mhaisalkar, S. G. ; Lee, P. S. ; Boey, F. ; Chen, Z. -K. ; Ng, C. M. ; Rao, V. R. ; Qi, G. J. (2007) Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors Applied Physics Letters, 91 (24). 242107_1-242107_3. ISSN 0003-6951

Cahyadi, T. ; Tey, J. N. ; Mhaisalkar, S. G. ; Boey, F. ; Rao, V. R. ; Lal, R. ; Huang, Z. H. ; Qi, G. J. ; Chen, Z. -K. ; Ng, C. M. (2007) Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer Applied Physics Letters, 90 (12). 122112_1-122112_3. ISSN 0003-6951

Kale, N. S. ; Rao, V. R. (2006) Design and fabrication issues in affinity cantilevers for bioMEMS applications IEEE/ASME Journal of Microelectromechanical Systems, 15 (6). pp. 1789-1794. ISSN 1057-7157

Narasimhulu, K. ; setty, I. V. ; Rao, V. R. (2006) The effect of single-halo doping on the low-erequency noise performance of deep submicrometer MOSFETs IEEE Electron Device Letters, 27 (12). pp. 995-997. ISSN 0741-3106

Sarkar, Partha ; Mallik, Abhijit ; Sarkar, Chandan Kumar ; Ramgopal Rao, V. (2006) The effects of varying tilt angle of halo implant on the performance of sub 100nm LAC MOSFETs International Conference on Industrial and Information Systems, Srilanka . pp. 115-118.

Narasimhulu, K. ; Ramgopal Rao, V. (2006) xAnalog device and circuit performance degradation under substrate bias enhanced hot carrier stress 44th Annual International Reliability Physics Symposium (IRPS), San Jose, California, USA . pp. 465-470.

Narasimhulu, K. ; Ramgopal Rao, V. (2006) Analog circuit performance issues with aggressively scaled gate oxide CMOS technologies Proceedings - IEEE International Conference on VLSI Design . p. 6. ISSN 1063-9667

Sarkar, P. ; Mallik, A. ; Sarkar, C. K. ; Rao, V. R. (2005) Performance of channel engineered SDODEL MOSFET for mixed signal applications Proceedings of the 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, Hong Kong . pp. 687-690.

Sathyapalan, Amarchand ; Lohani, Anup ; Santra, Sangita ; Goyal, Saurabh ; Ravikanth, M. ; Mukherji, Soumyo ; Ramgopal Rao, V. (2005) Preparation, characterization, and electrical properties of a self-assembled meso-pyridyl porphyrin monolayer on gold surfaces Australian Journal of Chemistry, 58 (11). pp. 810-816. ISSN 0004-9425

Jha, N. ; Reddy, P. S. ; Sharma, D. K. ; Rao, V. R. (2005) NBTI degradation and its impact for analog circuit reliability IEEE Transactions on Electron Devices, 52 (12). pp. 2609-2615. ISSN 0018-9383

Narasimhulu, K. ; Rao, V. R. (2005) Forward body-biased single halo MOS devices for low voltage analog circuits Proceedings of the 2005 International Conference on Simulation of Semiconductor Processes and Devices, Tokyo, Japan . pp. 255-258.

Hakim, Najeeb-ud-din ; Ramgopal Rao, V. ; Vasi, J. (2005) Design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applications Semiconductor Science and Technology, 20 (9). pp. 895-902. ISSN 0268-1242

Reddy, M. V. R. ; Sharma, D. K. ; Patil, M. B. ; Rao, V. R. (2005) Power-area evaluation of various double-gate RF mixer topologies IEEE Electron Device Letters, 26 (9). pp. 664-666. ISSN 0741-3106

Jha, N. K. ; Rao, V. R. (2005) A new oxide trap-assisted NBTI degradation model IEEE Electron Device Letters, 26 (9). pp. 687-689. ISSN 0741-3106

Sathyapalan, A. ; Lohani, A. ; Santra, S. ; Ravikanth, M. ; Mukherji, S. ; Ramgopal Rao, V. (2005) A meso-pyridyl porphyrin self-assembled monolayer on gold substrates for molecular electronics applications Proceedings of the 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 1 . pp. 238-240.

Kumar, D. V. ; Narasimhalu, K. ; Reddy, P. S. ; Shojaei-Baghini, M. ; Sharma, D. K. ; Patil, M. B. ; Rao, V. R. (2005) Evaluation of the impact of layout on device and analog circuit performance with lateral asymmetric channel MOSFETs IEEE Transactions on Electron Devices, 52 (7). pp. 1603-1609. ISSN 0018-9383

Jha, N. K. ; Reddy, P. S. ; Rao, V. R. (2005) A new drain voltage enhanced NBTI degradation mechanism Proceedings of the 2005 (43 rd Annual) International Reliability Physics Symposium (IRPS), San Jose, California, USA . pp. 524-528.

Hakim, N. ; Rao, V. R. ; Vasi, J. ; Woo, J. C. S. (2005) Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications IEEE Transactions on Device and Materials Reliability, 5 (1). pp. 127-132. ISSN 1530-4388

Narasimhulu, K. ; Ramgopal Rao, V. (2005) Deep sub-micron device and analog circuit parameter sensitivity to process variations with halo doping and its effect on circult linearity Japanese Journal of Applied Physics, 44 . pp. 2180-2186. ISSN 0021-4922

Joshi, M. ; Singh, S. ; Swain, B. ; Patil, S. ; Dusane, R. ; Rao, R. ; Mukherji, S. (2004) Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films Proceedings of the IEEE INDICON 2004 . pp. 538-541.

Chawda, Pradeep Kumar ; Anand, Balusu ; Ramgopal Rao, V. (2004) Effectiveness of optimum body bias for leakage reduction in high-K CMOS circuits Proceedings of the 35th International Conference on Solid State Devices and Materials (SSDM 2004), Tokyo, Japan . pp. 434-435.

Narasimhalu, K. ; Desai, M. P. ; Narendra, S. G. ; Rao, V. R. (2004) The effect of LAC doping on deep submicrometer transistor capacitances and its influence on device RF performance IEEE Transactions on Electron Devices, 51 (9). pp. 1416-1423. ISSN 0018-9383

Tomar, B. ; Rao, V. R. (2004) Sub-threshold swing degradation due to localized charge storage in SONOS memories Proceedings of the 11th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Hinshcu, Taiwan . pp. 251-253.

Jha, N. K. ; Rao, V. R. (2004) Understanding the NBTI degradation in halo-doped channel p-MOSFETs Proceedings of the 11th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Hinshcu, Taiwan . pp. 311-314.

Anand, B. ; Desai, M. P. ; Rao, V. R. (2004) Silicon film thickness optimization for SOI-DTMOS from circuit performance considerations IEEE Electron Device Letters, 25 (6). pp. 436-438. ISSN 0741-3106

Ramgopal Rao, V. ; Mohapatra, Nihar R. (2004) Device and circuit performance issues with deeply scaled high-K MOS transistors Journal of Semiconductor Technology and Science, 4 (1). pp. 52-62. ISSN 1598-1657

Narasimhulu, K. ; Sharma, D. K. ; Rao, V. R. (2003) Impact of lateral asymmetric channel doping on deep submicrometer mixed-signal device and circuit performance IEEE Transactions on Electron Devices, 50 (12). pp. 2481-2489. ISSN 0018-9383

Din, N. ; Rao, V. R. ; Vasi, J. (2003) Thin film single halo (SH) SOI nMOSFETs-hot carrier reliability for mixed mode applications IEEE TENCON 2003, Convergent Technologies for the Asia-Pacific, Bangalore, India, 2 . pp. 613-617.

Mohapatra, N. R. ; Nair, D. R. ; Mahapatra, S. ; Ramgopal Rao, V. ; Shukuri, S. ; Bude, J. D. (2003) CHISEL programming operation of scaled NOR flash EEPROMs-effect of voltage scaling, device scaling, and technological parameters IEEE Transactions on Electron Devices, 50 (10). pp. 2104-2111. ISSN 0018-9383

Mohapatra, N. R. ; Nair, D. R. ; Mahapatra, S. ; Rao, V. R. ; Shukuri, S. (2003) The impact of channel engineering on the performance reliability and scaling of CHISEL NOR flash EEPROMs 33rd European Solid-State Device Research Conference (ESSDERC) 2003, Lisbon, Portugal . pp. 541-544.

ManjulaRani, K. N. ; Ramgopal Rao, V. ; Vasi, J. (2003) Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressing IEEE Transactions on Device and Materials Reliability . pp. 168-172.

Patil, Samadhan B. ; Vairagar, Anand V. ; Kumbhar, Alka A. ; Sahu, Laxmi K. ; Ramgopal Rao, V. ; Venkatramani, N. ; Dusane, R. O. ; Schroeder, B. (2003) Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices Thin Solid Films, 430 (1-2). pp. 63-66. ISSN 0040-6090

Waghmare, Parag C. ; Patil, Samadhan B. ; Kumbhar, Alka A. ; Rao, Ramgopal ; Dusane, R. O. (2003) Nitrogen dilution effects on structural and electrical properties of hot wire deposited a-SiN:H films for deep sub-micron CMOS technologies Thin Solid Films, 430 (1-2). pp. 189-191. ISSN 0040-6090

Mohapatra, N. R. ; Desai, M. P. ; Narendra, S. G. ; Ramgopal Rao, V. (2003) Modeling of parasitic capacitances in deep submicrometer conventional and high-K dielectric MOS transistors IEEE Transactions on Electron Devices, 50 (4). pp. 959-966. ISSN 0018-9383

ManjulaRani, K. N. ; Rao, V. R. ; Vasi, J. (2003) A new method to characterize border traps in sub-micron transistors using hysteresis in the drain current IEEE Transactions on Electron Devices, 50 (4). 973- 979. ISSN 0018-9383

Mohapatra, N. R. ; Mahapatra, S. ; Rao, V. R. ; Shukuri, S. ; Bude, J. (2003) Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs Proceedings of the International Reliability Physics Symposium (IRPS) 2003, Dallas, Texas, USA . pp. 518-522.

Kumar, D. V. ; Mohapatra, N. R. ; Patil, M. B. ; Rao, V. R. (2003) Application of look-up table approach to high-K gate dielectric MOS transistor circuits Proceedings - IEEE International Conference on VLSI Design . pp. 128-133. ISSN 1063-9667

Mohapatra, N. R. ; Desai, M. P. ; Rao, V. R. (2003) Detailed analysis of FIBL in MOS transistors with high-k gate dielectrics Proceedings - IEEE International Conference on VLSI Design . pp. 99-104. ISSN 1063-9667

Hakim, N. ; Rao, V. R. ; Vasi, J. (2003) Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applications Proceedings - IEEE International Conference on VLSI Design . pp. 110-115. ISSN 1063-9667

Dixit, A. ; Rao, V. R. (2003) A novel dynamic threshold operation using electrically induced junction MOSFET in the deep sub-micrometer CMOS regime Proceedings - IEEE International Conference on VLSI Design . pp. 499-503. ISSN 1063-9667

Waghmare, Parag C. ; Patil, Samadhan B. ; Kumbhar, Alka ; Dusane, R. O. ; Ramgopal Rao, V. (2002) Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies Microelectronic Engineering, 61-62 . pp. 625-629. ISSN 0167-9317

Borse, D. G. ; M. Rani, K. N. ; Jha, N. K. ; Chandorkar, A. N. ; Vasi, J. ; Ramgopal Rao, V. ; Cheng, B. ; Woo, J. C. S. (2002) Optimization and realization of sub-100-nm channel length single halo p-MOSFETs IEEE Transactions on Electron Devices, 49 (6). pp. 1077-1079. ISSN 0018-9383

Mohapatra, N. R. ; Desai, M. P. ; Narendra, S. G. ; Rao, V. R. (2002) The effect of high-K gate dielectrics on deep sub-micrometer CMOS device and circuit performance IEEE Transactions on Electron Devices, 49 (5). pp. 826-831. ISSN 0018-9383

Najeev-ud-din, ; Dunga, M. V. ; Kumar, A. ; Vasi, J. ; Ramgopal Rao, V. ; Cheng, Baohong ; Woo, J. C. S. (2002) Änalysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique IEEE Electron Device Letters, 23 (4). pp. 209-211. ISSN 0741-3106

Dixit, A. ; Pal, D. K. ; Roy, J. N. ; Ramgopal Rao, V. (2002) Channel engineering for sub-micron CMOS technologies Proceedings of the 11th International Workshop on The Physics of Semiconductor Devices, Delhi, India, 4746 (2). pp. 637-640.

Najeeb-ud-Din, ; Ramgopal Rao, V. ; Vasi, J. (2002) Characterization and simulation of lateral asymmetric Channel silicon-on-insulator MOSFETs Proceedings of the 11th International Workshop on The Physics of Semiconductor Devices, Delhi, India, 4746 (2). pp. 644-648. ISSN 1017-2653

ManjulaRani, K. N. ; Ramgopal Rao, V. ; Vasi, J. (2002) Degradation study of ultra-thin JVD silicon nitride MNSFETs MRS Proceedings, 716 . B4.18_1-B4.18_6. ISSN 1946-4274

Mohapatra, Nihar Ranjan ; Mahapatra, Souvik ; Ramgopal Rao, V. (2002) Device scaling effects on substrate enhanced degradation in MOS transistors MRS Proceedings, 716 . B7.2_1-B7.2_6. ISSN 1946-4274

Bhuwalka, Krishna Kumar ; Mohapatra, Nihar R. ; Narendra, Siva G. ; Ramgopal Rao, V. (2002) Effective dielectric thickness scaling for high-K gate dielectric MOSFETs MRS Proceedings, 716 . B4.19 _1-B4.19 _5. ISSN 1946-4274

Dixit, Abhisek ; Dusane, Rajiv O. ; Ramgopal Rao, V. (2002) Electrically induced junction MOSFET for high performance sub-50nm CMOS technology MRS Proceedings, 716 . B7.6_1-B7.6_6. ISSN 1946-4274

ManjulaRani, K. N. ; Ramgopal Rao, V. ; Vasi, J. (2002) High field stressing effects in JVD Nitride capacitors Proceedings of the 11th International Workshop on the Physics of Semiconductor Devices, 4746 (2). pp. 1316-1319. ISSN 1017-2653

Waghmare, Parag C. ; Patil, Samadhan B. ; Dusane, Rajiv O. ; Ramgopal Rao, V. (2002) Improvement in gate dielectric quality of ultra thin a: SiN:H MNS capacitor by hydrogen etching of the substratet MRS Proceedings, 716 . B4.8_1-B4.13_6. ISSN 1946-4274

Porwal, Abhay ; Narsude, Mayur ; Ramgopal Rao, V. ; Mukherji, Soumyo (2002) Microcantilever based biosensors IETE Technical Review, 19 (5). pp. 257-267. ISSN 0256-4602

Jha, Neeraj K. ; Ramgopal Rao, V. ; Woo, J. C. S. (2002) Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Florence, Italy . pp. 603-606.

Gupta, Mayank ; Vidya, V. ; Ramagpopal Rao, V. ; To, Kun H. ; Woo, Jason C. S. (2002) Optimization of sub 100 nm Γ-gate Si-MOSFETs for RF applications Proceedings of the 11th International Workshop on The Physics of Semiconductor Devices, Delhi, India, 4746 (2). pp. 652-656. ISSN 1017-2653

Mutha, Y. M. ; Lal, R. ; Ramgopal Rao, V. (2002) Physical mechanisms for pulsed AC stress degradation in thin gate oxide MOSFETs Proceedings of the 9th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Singapore . pp. 250-253.

Mutha, Yatin ; ManjulaRani, K. N. ; Lal, Rakesh ; Ramgopal Rao, V. (2002) Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectrics MRS Proceedings, 716 . B7-22_1-B7-22_6. ISSN 1946-4274

Poornima, P. ; Tripathy, S. K. ; Ramgopal Rao, V. ; Sharma, D. K. (2002) Resolution enhancement techniques for optical lithography Proceedings of the 11th International Workshop on The Physics of Semiconductor Devices, Delhi, India, 4746 (2). pp. 1260-1262.

Kumar, D. V. ; Thakker, R. A. ; Patil, M. B. ; Rao, V. R. (2002) Simulation study of non-quasi static behaviour of MOS transistors Proceedings of the 5th International Conference on Modeling and Simulation of Microsystems, San Juan, Puerto Rico, 1 . pp. 742-745.

Rastogi, Shantanu ; Ramagopal Rao, V. ; Jhaveri, Ritesh ; Mukherji, S. ; Ravikanth, M. (2002) Status and trends in molecular electronics IETE Technical Review, 19 (5). pp. 307-315. ISSN 0256-4602

Vairagar, A. V. ; Patil, S. B. ; Pete, D. J. ; Waghmare, P. C. ; Dusane, R. O. ; Venkatraman, N. ; Ramgopal Rao, V. (2002) Suppression of boron penetration by hot wire CVD polysilicon Proceedings of the 9th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Singapore . pp. 223-226.

Najeeb-ud-Din, ; Mohan, Aatish K. ; Dunga, V. ; Ramgopal Rao, V. ; Vasi, J. (2002) Suppression of parasitic BJT action in single pocket thin film deep sub-micron SOI MOSFETs MRS Proceedings, 716 . B1.1_1-B1.1_6. ISSN 1946-4274

Mohapatra, N. R. ; Mahapatra, S. ; Rao, V. R. (2002) The study of damage generation in n-channel MOS transistors operating in the substrate enhanced gate current regime Proceedings of the 9th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Singapore . pp. 27-30.

Kumar, Aatish ; Lal, Rakesh ; Ramgopal Rao, V. (2001) A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs Microelectronic Engineering, 59 (1-4). pp. 429-433. ISSN 0167-9317

Mahapatra, S. ; Rao, V. R. ; Vasi, J. ; Cheng, B. ; Woo, J. C. S. (2001) A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique Solid-State Electronics, 45 (10). pp. 1717-1723. ISSN 0038-1101

Mohapatra, N. R. ; Mahapatra, S. ; Ramgopal Rao, V. (2001) Study of degradation in channel in initiated secondary electron injection regime Proceedings of the 31st European Solid-State Device Research Conference (ESSDERC), Nuremberg, Germany . pp. 291-294.

Mohapatra, N. R. ; Desai, M. P. ; Narendra, S. G. ; Ramgopal Rao, V. (2001) The impact of high-K gate dielectrics on sub 100 nm CMOS circuit performance Proceedings of the 31st European Solid-State Device Research Conference (ESSDERC), Nuremberg, Germany . pp. 239-242.

Patil, Samadhan B. ; Kumbhar, Alka ; Waghmare, Parag ; Ramgopal Rao, V. ; Dusane, R. O. (2001) Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal-oxide-semiconductor devices Thin Solid Films, 395 (1-2). pp. 270-274. ISSN 0040-6090

Kumar, A. ; Mahapatra, S. ; Lal, R. ; Rao, V. R. (2001) Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs Microelectronics Reliability, 41 (7). pp. 1049-1051. ISSN 0026-2714

Mohapatra, N. R. ; Dutta, A. ; Sridhar, G. ; Desai, M. P. ; Rao, V. R. (2001) Sub-100 nm CMOS circuit performance with high-K gate dielectrics Microelectronics Reliability, 41 (7). pp. 1045-1048. ISSN 0026-2714

Mahapatra, S. ; Rao, V. R. ; Cheng, B. ; Khare, M. ; Parikh, C. D. ; Woo, J. C. S. ; Vasi, J. M. (2001) Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si₃N₄ MNSFETs IEEE Transactions on Electron Devices, 48 (4). pp. 679-684. ISSN 0018-9383

Dunga, M. V. ; Kumar, A. ; Ramgopal Rao, V. (2001) Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique Proceedings of 8th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Singapore . pp. 254-257.

Najeeb-ud-Din, ; Dunga, M. V. ; Kumar, A. ; Ramgopal Rao, V. ; Vasi, J. (2001) Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs 6th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, China, 1 . pp. 655-660.

Anil, Kottantharayil ; Mahapatra, Souvik ; Rao, Valipe Ramgopal ; Eisele, Ignaz (2001) Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs Japanese Journal of Applied Physics, 40 . pp. 2621-2626. ISSN 0021-4922

Mohapatra, N. R. ; Dutta, A. ; Desai, M. P. ; Ramgopal Rao, V. (2001) Effect of fringing capacitances in sub 100 nm MOSFETs with high-K gate dielectrics Proceedings of the 14th International Conference on VLSI Design, Bangalore, India . pp. 479-482.

Shrivastav, G. ; Mahapatra, S. ; Ramgopal Rao, V. ; Vasi, J. (2001) Performance optimization of 60 nm channel length vertical MOSFETs using channel engineering Proceedings of the 14th International Conference on VLSI Design, Bangalore, India . pp. 475-478.

Anil, K. G. ; Mahapatra, S. ; Eisele, I. ; Rao, V. R. ; Vasi, J. (2000) Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime Proceedings of the 30th European Solid-State Device Research Conference (ESSDERC), Ireland . pp. 124-127.

Anil, K. G. ; Mahapatra, S. ; Ramgopal Rao, V. ; Eisele, I. (2000) Comparison of sub-bandgap impact ionization in deep-sub-micron conventional and lateral asymmetrical channel nMOSFETs Proceedings of the International Conference on Solid state Devices and Materials (SSDM) Sendai, Japan . pp. 60-61.

Mahapatra, S. ; Parikh, C. D. ; Rao, V. R. ; Viswanathan, C. R. ; Vasi, J. (2000) Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs IEEE Transactions on Electron Devices, 47 (4). pp. 789-796. ISSN 0018-9383

Mahapatra, S. ; Parikh, C. D. ; Ramagopal Rao, V. ; Viswanathan, C. R. ; Vasi, J. (2000) A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique IEEE Transactions on Electron Devices, 47 (1). pp. 171-177. ISSN 0018-9383

Suryagandh, Sushant S. ; Ramgopal Rao, V. (2000) Dynamic Threshold voltage MOSFETs for future low power sub 1V CMOS applications SPIE Proceedings Series, 3975 (2). pp. 655-658. ISSN 1017-2653

Patil, Samadhan B. ; Vaidya, Sangeeta ; Kumbhar, Alka ; Dusane, R. O. ; Chandorkar, A. N. ; Ramgopal Rao, V. (2000) Low temperature Hot-Wire CVD nitrides for deep sub-micron CMOS technologies SPIE Proceedings Series, 3975 (2). pp. 879-882. ISSN 1017-2653

Mahapatra, S. ; Ramgopal Rao, V. ; Vasi, J. ; Cheng, B. ; Woo, J. C. S. (2000) Reliability studies on sub 100 nm SOI-MNSFETs Proceedings of the International Integrated Reliability Workshop, California, USA . pp. 29-31.

Mahapatra, S. ; Manjularani, K. N. ; Ramgopal Rao, V. ; Vasi, J. (2000) ULSI MOS transistors with jet vapour deposited (JVD) silicon nitride for the gate insulator SPIE Proceedings Series, 3975 (2). pp. 803-810. ISSN 1017-2653

Cheng, Baohong ; Rao, V. R. ; Woo, J. C. S. (1999) Exploration of velocity overshoot in a high-performance deep sub-0.1-µm SOI MOSFET with asymmetric channel profile IEEE Electron Device Letters, 20 (10). 538- 540. ISSN 0741-3106

Inani, A. ; Rao, V. R. ; Cheng, B. ; Zeitzoff, P. ; Woo, J. C. S. (1999) Capacitance degradation due to fringing field in deep sub-micron MOSFETs with high-K gate dielectrics 29th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium . pp. 160-163.

Mahapatra, S. ; Ramgopal Rao, V. ; Parikh, C. D. ; Vasi, J. ; Cheng, B. ; Khare, M. ; Woo, J. C. S. (1999) Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique 29th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium . pp. 592-595.

Ramgopal Rao, V. ; Hansch, W. ; Mahapatra, S. ; Sharma, D. K. ; Vasi, J. ; Grabolla, T. ; Eisele, I. (1999) Low temperature-high pressure grown thin gate dielectrics for MOS applications Microelectronic Engineering, 48 (1-4). pp. 223-226. ISSN 0167-9317

Mahapatra, S. ; Ramgopal Rao, V. ; Parikh, C. D. ; Vasi, J. ; Cheng, B. ; Woo, J. C. S. (1999) A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping Microelectronic Engineering, 48 (1-4). pp. 193-196. ISSN 0167-9317

Cheng, B. ; Cao, M. ; Rao, R. ; Inani, A. ; Vande Voorde, P. ; Greene, W. M. ; Stork, J. M. C. ; Yu, Zhiping ; Zeizoff, P. M. ; Woo, J. C. S. (1999) The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs IEEE Transactions on Electron Devices, 46 (7). pp. 1537-1544. ISSN 0018-9383

Mahapatra, S. ; Parikh, C. D. ; Vasi, J. ; Ramgopal Rao, V. ; Viswanathan, C. R. (1999) A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs Solid-State Electronics, 43 (5). pp. 915-922. ISSN 0038-1101

Mahapatra, S. ; Ramgopal Rao, V. ; Manjula Rani, K. N. ; Parikh, C. D. ; Vasi, J. ; Cheng, B. ; Khare, M. ; Woo, J. C. S. (1999) 100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric Technical Digest, 1999 Symposium on VLSI Technology, Kyoto, Japan . pp. 79-80.

Cheng, Baohong ; Inani, A. ; Rao, R. ; Woo, J. C. S. (1999) Channel engineering for high speed sub-1.0 V power supply deep sub-micron CMOS Technical Digest, 1999 Symposium on VLSI Technology, Kyoto, Japan . pp. 69-70.

Inani, Anand ; Rao, Ramgopal Valipe ; Cheng, Baohong ; Woo, Jason (1999) Gate stack architecture analysis and channel engineering in deep sub-micron MOSFETs Japanese Journal of Applied Physics, 38 . pp. 2266-2271. ISSN 0021-4922

Balandin, A. ; Cai, S. ; Li, R. ; Wang, K. L. ; Rao, V. R. ; Viswanathan, C. R. (1998) Flicker noise in GaN/Al_0.15Ga_0.85N doped channel heterostructure field effect transistors IEEE Electron Device Letters, 19 (12). pp. 475-477. ISSN 0741-3106

Viswanathan, C. R. ; Ramgopal Rao, V. (1998) Application of charge pumping technique for sub-micron MOSFET characterization Microelectronic Engineering, 40 (3-4). pp. 131-146. ISSN 0167-9317

Cheng, B. ; Rao, V. R. ; Woo, J. C. S. (1998) Sub-0.18 μm SOI MOSFETs using lateral asymmetric channel profile and Ge pre-amorphization salicide technology Proceedings of the IEEE SOI Conference, Stuart, Florida, USA . pp. 113-114. ISSN 1078-621X

Cheng, B. ; Ramgopal Rao, V. ; Ikegami, B. ; Woo, J. C. S. (1998) Realization of 0.1 um asymmetric channel MOSFETs with excellent short-channel performance and reliability Technical Digest, 28th European Solid-State Device Research Conference (ESSDERC), Bordeaux, France . pp. 520-523.

Sachdev, R. ; Wijeratne, G. ; Ramgopal Rao, V. ; Viswanathan, C. R. (1998) A study of the effect of plasma etch damage on sub-micron MOSFET's flicker noise properties Technical Digest, 28th European Solid-State Device Research Conference (ESSDERC), Bordeaux, France . pp. 572-575.

Inani, A. ; Ramgopal Rao, V. ; Cheng, B. ; Cao, M. ; Voorde, P. V. ; Greene, W. ; Woo, J. C. S. (1998) Performance considerations in using high-k dielectrics for deep sub-micron MOSFETs Proceedings of the Solid state Devices and Materials (SSDM) Research Conference, Hiroshima, Japan . pp. 94-95.

Ramgopal Rao, V. ; Wijeratne, G. ; Chu, D. ; Brozek, T. ; Viswanathan, C. R. (1998) Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs 3rd International Symposium on Plasma Process-Induced Damage (P2ID), Hawaii, USA . pp. 124-127.

Hansch, W. ; Ramgopal Rao, V. ; Fink, C. ; Kaesen, F. ; Eisele, I. (1998) Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs Thin Solid Films, 321 (1-2). pp. 206-214. ISSN 0040-6090

Brozek, T. ; Rao, V. R. ; Sridharan, A. ; Werking, J. D. ; Chan, Y. D. ; Viswanathan, C. R. (1998) Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices IEEE Transactions on Semiconductor Manufacturing, 11 (2). pp. 211-216. ISSN 0894-6507

Viswanathan, C. R. ; Ramgopal Rao, V. ; Brozek, T. (1998) Localized charge injection: a tool to investigate plasma damage in CMOS devices SPIE Proceedings Series, 3316 (2). pp. 980-985. ISSN 1017-2653

Ramgopal Rao, V. ; Hansch, W. ; Eisele, I. (1997) Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs Technical Digest - International Electron Devices Meeting . pp. 811-814. ISSN 0163-1918

Hansch, W. ; Rao, V. R. ; Eisele, I. (1997) The planar-doped-barrier-FET: MOSFET overcomes conventional limitations 27th European Solid-State Device Research Conference (ESSDERC), Stuttgart, Germany . pp. 624-627.

Ramgopal Rao, V. ; Hansch, W. ; Baumgartner, H. ; Eisele, I. ; Sharma, D. K. ; Vasi, J. ; Grabolla, T. (1997) Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics Thin Solid Films, 296 (1-2). pp. 37-40. ISSN 0040-6090

Ramgopal Rao, V. ; Eisele, I. ; Patrikar, R. M. ; Sharma, D. K. ; Vasi, J. ; Grabolla, T. (1997) High-field stressing of LPCVD gate oxides IEEE Electron Device Letters, 18 (3). pp. 84-86. ISSN 0741-3106

Ramgopal Rao, V. ; Sharma, D. K. ; Vasi, J. (1996) Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics IEEE Transactions on Electron Devices, 43 (9). pp. 1467-1470. ISSN 0018-9383

Rao, V. R. ; Wittmann, F. ; Gossner, H. ; Eisele, I. (1996) Hysteresis behavior in 85-nm channel length vertical n-MOSFETs grown by MBE IEEE Transactions on Electron Devices, 43 (6). pp. 973-976. ISSN 0018-9383

Ramgopal Rao, V. ; Vasi, J. (1992) Radiation-induced interface-state generation in reoxidized nitrided SiO₂ Journal of Applied Physics, 71 (2). 1029_1-1029_3. ISSN 0021-8979