The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Cheng, B. ; Cao, M. ; Rao, R. ; Inani, A. ; Vande Voorde, P. ; Greene, W. M. ; Stork, J. M. C. ; Yu, Zhiping ; Zeizoff, P. M. ; Woo, J. C. S. (1999) The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs IEEE Transactions on Electron Devices, 46 (7). pp. 1537-1544. ISSN 0018-9383

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The potential impact of high-κ gate dielectrics on device short-channel performance is studied over a wide range of dielectric permittivities using a two-dimensional (2-D) simulator implemented with quantum mechanical models. It is found that the short-channel performance degradation is caused by the fringing fields from the gate to the source/drain regions. These fringing fields in the source/drain regions further induce electric fields from the source/drain to channel which weakens the gate control. The gate dielectric thickness-to-length aspect ratio is a proper parameter to quantify the percentage of the fringing field and thus the short channel performance degradation. In addition, the gate stack architecture plays an important role in the determination of the device short-channel performance degradation. Using double-layer gate stack structures and low-κ dielectric as spacer materials can well confine the electric fields within the channel thereby minimizing short-channel performance degradation. The introduction of a metal gate not only eliminates the poly gate depletion effect, but also improves short-channel performance. Several approaches have been proposed to adjust the proper threshold voltage when midgap materials or metal gates are used.

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ID Code:44443
Deposited On:22 Jun 2011 03:49
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