Jha, N. K. ; Reddy, P. S. ; Rao, V. R. (2005) A new drain voltage enhanced NBTI degradation mechanism Proceedings of the 2005 (43 rd Annual) International Reliability Physics Symposium (IRPS), San Jose, California, USA . pp. 524-528.
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Abstract
Interface state generation and threshold voltage degradation for various channel length devices stressed at different drain bias has been studied. It is found that NBTI effect decreases at Low drain bias due to decrease in effective gate bias near the drain edge. The subsequent increase in degradation at higher drain stress bias is due to non-uniform generation of interface states and subsequent diffusion o f generated hydrogen species along the length of the channel. This effect is more pronounced for short channel devices stressed at high temperatures and high drain bias.
Item Type: | Article |
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Source: | Copyright of this article belongs to Proceedings of the 2005 (43 rd Annual) International Reliability Physics Symposium (IRPS), San Jose, California, USA. |
ID Code: | 79759 |
Deposited On: | 28 Jan 2012 11:51 |
Last Modified: | 28 Jan 2012 11:51 |
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