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Bose, D. N. ; Bhunia, S. (2005) High resistivity In-doped ZnTe: electrical and optical properties Bulletin of Materials Science, 28 (7). pp. 647-650. ISSN 0250-4707

Pal, S. ; Mahapatra, R. ; Ray, S. K. ; Chakraborty, B. R. ; Shivaprasad, S. M. ; Lahiri, S. K. ; Bose, D. N. (2003) Microwave plasma oxidation of gallium nitride Thin Solid Films, 425 (1-2). pp. 20-23. ISSN 0040-6090

Chakraborty, B. R. ; Dilawar, Nita ; Pal, S. ; Bose, D. N. (2002) SIMS characterization of GaAs MIS devices at the interface Thin Solid Films, 411 (2). pp. 240-246. ISSN 0040-6090

Bose, M. ; Bose, D. N. ; Basa, D. K. (2002) Plasma enhanced growth, composition and refractive index of silicon oxynitride films Materials Letters, 52 (06). pp. 417-422. ISSN 0167-577X

Pal, Suparna ; Bose, D. N. (2001) Fabrication and characterization of GaAs mis devices with N-rich PEVCD Si_xN_y dielectric Applied Surface Science, 181 (3-4). pp. 179-184. ISSN 0169-4332

Bose, D. N. (2001) Properties, processing and applications of indium phosphide Circuits and Devices Magazine, 17 (4). pp. 34-35. ISSN 8755-3996

Bose, M. ; Basa, D. K. ; Bose, D. N. (2001) Effect of ammonia plasma pretreatment on the plasma enhanced chemical vapor deposited silicon nitride films Materials Letters, 48 (6). pp. 336-341. ISSN 0167-577X

Bose, Mohua ; Basa, D. K. ; Bose, D. N. (2001) Study of aluminum and gold as the gate electrode material on silicon nitride based MIS devices Applied Surface Science, 171 (1-2). pp. 130-135. ISSN 0169-4332

Bose, Mohua ; Basa, D. K. ; Bose, D. N. (2001) Electrical conduction studies of plasma enhanced chemical vapor deposited silicon nitride films Journal of Vacuum Science & Technology A, 19 (1). pp. 41-44. ISSN 0734-2101

Pal, S. ; Ray, S. K. ; Chakraborty, B. R. ; Lahiri, S. K. ; Bose, D. N. (2001) Gd₂O₃, Ga₂O₃(Gd₂O₃), Y₂O₃, and Ga₂O₃, as high-k gate dielectrics on SiGe: a comparative study Journal of Applied Physics, 90 (8). pp. 4103-4107. ISSN 0021-8979

Bose, D. N. ; Pal, Sarbari (2001) Photoconductivity, low-temperature conductivity, and magnetoresistance studies on the layered semiconductor GaTe Physical Review B, 63 (23). 235321_1-235321_8. ISSN 0163-1829

Pal, S. ; Ray, S. K. ; Lahiri, S. ; Bose, D. N. (2000) Ga₂O₃(Gd₂O₃) film as high-k gate dielectric for SiGe MOSFET devices Electronics Letters, 36 (24). pp. 2044-2046. ISSN 0013-5194

Bhunia, S. ; Banerji, P. ; Chaudhuri, T. K. ; Haldar, A. R. ; Bose, D. N. ; Aparna, Y. ; Chettri, M. B. ; Chakraborty, B. R. (2000) Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry Bulletin of Materials Science, 23 (3). pp. 207-209. ISSN 0250-4707

Bose, D. N. ; Banerji, P. ; Bhunia, S. ; Aparna, Y. ; Chhetri, M. B. ; Chakraborty, B. R. (2000) Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence Applied Surface Science, 158 (1-2). pp. 16-20. ISSN 0169-4332

Bose, M. ; Basa, D. K. ; Bose, D. N. (2000) Study of nitrous oxide plasma oxidation of silicon nitride thin films Applied Surface Science, 158 (3-4). pp. 275-280. ISSN 0169-4332

Basa, D. K. ; Bose, M. ; Bose, D. N. (2000) Capacitance-voltage measurements on plasma enhanced chemical vapor deposited silicon nitride films Journal of Applied Physics, 87 (9). pp. 4324-4326. ISSN 0021-8979

Bhunia, S. ; Bose, D. N. (2000) Schottky barrier studies on single crystal ZnTe and determination of interface index Journal of Applied Physics, 87 (06). pp. 2931-2935. ISSN 0021-8979

Ghosh, S. ; Dutta, P. K. ; Bose, D. N. (1999) Neural network modeling of PECVD silicon nitride films Materials Science in Semiconductor Processing, 2 (1). pp. 1-11. ISSN 1369-8001

Bose, D. N. ; Ahrenkiel, R. K. ; Bhunia, S. (1999) Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe Journal of Applied Physics, 86 (11). pp. 6599-6601. ISSN 0021-8979

Sridhara Rao, D. V. ; Muraleedharan, K. ; Dey, G. K. ; Halder, S. K. ; Bhagavannarayan, G. ; Banerji, P. ; Pal, D. ; Bose, D. N. (1999) Transmission electron microscopy and X-ray diffraction studies of quantum wells Bulletin of Materials Science, 22 (6). pp. 947-951. ISSN 0250-4707

Bhunia, S. ; Bose, D. N. (1998) Microwave synthesis, single crystal growth and characterization of ZnTe Journal of Crystal Growth, 186 (04). pp. 535-542. ISSN 0022-0248

Pal, R. ; Dhaul, A. ; Agarwal, S. K. ; Pal, D. ; Bose, D. N. (1998) Effective techniques for reduction of silicon impurity in chloride vapor phase epitaxial growth of GaInAs Materials Research Bulletin, 33 (2). pp. 261-267. ISSN 0025-5408

Pal, R. ; Singh, M. ; Murlidharan, R. ; Agarwal, S. K. ; Pal, D. ; Bose, D. N. (1998) Lattice mismatch and surface morphology studies of In_xGa_1-xAs epilayers grown on GaAs substrates Bulletin of Materials Science, 21 (4). pp. 313-316. ISSN 0250-4707

Bhunia, S. ; Pal, D. ; Bose, D. N. (1998) Photoluminescence and photoconductivity in hydrogen-passivated ZnTe Semiconductor Science and Technology, 13 (12). pp. 1434-1438. ISSN 0268-1242

Bose, D. N. (1997) Transistors - from point contact to single electron Resonance - Journal of Science Education, 2 (12). pp. 39-54. ISSN 0971-8044

Chanda, B. ; Bose, D. N. (1997) Thermal quenching of luminescence in erbium doped semiconductors Pramana - Journal of Physics, 48 (6). pp. 1145-1149. ISSN 0304-4289

Bose, D. N. ; Pal, S. (1997) Schottky barriers on anisotropic semiconductor GaTe Philosophical Magazine Part B, 75 (2). pp. 311-318. ISSN 0958-6644

Hullavarad, Shiva S. ; Bhoraskar, S. V. ; Bose, D. N. (1997) Detection of surface states in GaAs and InP by thermally stimulated exoelectron emission spectroscopy Journal of Applied Physics, 82 (11). pp. 5597-5599. ISSN 0021-8979

Bhumia, S. ; Bhattacharya, P. ; Bose, D. N. (1996) Pulsed laser deposition of ZnTe thin films Materials Letters, 27 (6). pp. 307-311. ISSN 0167-577X

Pal, S. ; Bose, D. N. (1996) Growth, characterisation and electrical anisotropy in layered chalcogenides GaTe and InTe Solid State Communications, 97 (8). pp. 725-729. ISSN 0038-1098

Ali, S. T. ; Ghosh, S. ; Bose, D. N. (1996) Ruthenium and sulphide passivation of GaAs Applied Surface Science, 93 (1). pp. 37-43. ISSN 0169-4332

Pal, D. ; Bose, D. N. (1996) Photoconductivity and photoluminescence studies in copper diffused InP Journal of Electronic Materials, 25 (05). pp. 677-684. ISSN 0361-5235

Pal, D. ; Bose, D. N. (1996) Reply to "comments on 'line shape, line width, and configuration coordinate diagram of the Cu band (1.21 ev) in InP"'[J. Appl. Phys. 80, 1937 (1996)] Journal of Applied Physics, 80 (3). p. 1940. ISSN 0021-8979

Ghosh, S. ; Bhattacharya, P. ; Bose, D. N. (1996) Strong photoluminescence in ammonia plasma treated amorphous-SiC thin films deposited by laser ablation Applied Physics Letters, 68 (21). pp. 2979-2981. ISSN 0003-6951

Pal, D. ; Bose, D. N. (1995) Deep level transient spectroscopy study in gettered liquid phase epitaxy grown In_0.53Ga_0.47As Journal of Applied Physics, 77 (1). pp. 210-212. ISSN 0021-8979

Pal, D. ; Bose, D. N. (1995) Line shape, linewidth and configuration coordinate diagram of the Cu band (1.21 ev) in InP Journal of Applied Physics, 78 (8). pp. 5206-5208. ISSN 0021-8979

Kumar, A. ; Pal, D. ; Bose, D. N. (1995) Liquid phase epitaxy growth of InGaAs with rare-earth gettering: characterization and deep level transient spectroscopy studies Journal of Electronic Materials, 24 (7). pp. 833-840. ISSN 0361-5235

Ali, S. T. ; Kumar, A. ; Bose, D. N. (1995) Schottky barrier height enhancement on n-Ino.₅₃Gao.₄₇As by (NH₄)₂S_x surface treatment Journal of Materials Science, 30 (19). pp. 5031-5035. ISSN 0022-2461

Pal, S. ; Bose, D. N. (1994) Growth, characterization and electrical anisotropy in GaTe- a natural semiconducting superlattice Bulletin of Materials Science, 17 (06). pp. 1039-1047. ISSN 0250-4707

Pal, D. ; Pal, S. ; Bose, D. N. (1994) Deep level transient spectroscopy of anisotropic semiconductor GaTe Bulletin of Materials Science, 17 (4). pp. 347-354. ISSN 0250-4707

Bose, D. N. ; Pal, S. (1994) A new semiconducting ferroelectric [Ga_1-xGe_xTe] Materials Research Bulletin, 29 (2). pp. 111-118. ISSN 0025-5408

Kumar, A. ; Bose, D. N. (1992) Liquid phase epitaxy growth of high purity InP using rare earth dysprosium gettering Materials Science and Engineering: B, 12 (4). pp. 389-392. ISSN 0921-5107

Bose, D. N. ; Kumar, Arvind (1992) InGaAs p-i-n photodiodes for fibre-optic communication Sadhana (Academy Proceedings in Engineering Sciences), 17 (3-4). pp. 385-389. ISSN 0256-2499

Paul, T. K. ; Bose, D. N. (1992) Photoluminescence on InP: effect of surfaces and interfaces Proceedings of SPIE, 1622 (30). ISSN 0277-786X

Pal, S. ; Bose, D. N. ; Asokan, S. ; Gopal, E. S. R. (1991) Anisotropic properties of the layered semiconductor InTe Solid State Communications, 80 (9). pp. 753-756. ISSN 0038-1098

Ali, S. T. ; Bose, D. N. (1991) Improved Au/n-GaAs schottky barriers due to Ru surface modification Materials Letters, 12 (5). pp. 388-393. ISSN 0167-577X

Roul, B. K. ; Pradhan, A. K. ; Rao, V. V. ; Bhattacharya, P. ; Pramanic, P. ; Kalvey, V. R. ; Bose, D. N. ; Chopra, K. L. (1991) Effect of laser irradiation on the superconducting properties of high-T_c SmBa₂Cu₃O_x Bulletin of Materials Science, 14 (03). pp. 713-718. ISSN 0250-4707

Bhattacharya, Pijush ; Bose, Dwarka N. (1991) Laser deposition of AlN thin films on InP and GaAs Japanese Journal of Applied Physics, 30 . L1750-L1752. ISSN 0021-4922

Bhattacharya, P. ; Bose, D. N. (1991) Pulsed laser deposition of CdTe thin films for heterojunctions on silicon Semiconductor Science and Technology, 6 (5). p. 384. ISSN 0268-1242

Paul, T. K. ; Bhattacharya, P. ; Bose, D. N. (1990) Characterization of pulsed laser deposited boron nitride thin films on InP Applied Physics Letters, 56 (26). pp. 2648-2650. ISSN 0003-6951

Bhattacharya, P. ; Banerjee, A. ; Chatterjee, A. P. ; Bose, D. N. (1990) Laser annealing of phosphorus-implanted CdTe Materials Science and Engineering: B, 5 (4). L1-L3. ISSN 0921-5107

Bendapudi, Seishu ; Bose, D. N. (1990) Photoluminescence and heavy doping effects in InP Bulletin of Materials Science, 13 (1-2). pp. 75-82. ISSN 0250-4707

Bose, D. N. ; Paul, T. K. (1990) Dielectric films on semiconductors: fluorides on indium phosphide Ferroelectrics, 102 (1). pp. 397-405. ISSN 0015-0193

Paul, T. K. ; Bose, D. N. (1990) Fluoride dielectric films on inp for metal-insulator-semiconductor applications Journal of Applied Physics, 67 (8). pp. 3744-3749. ISSN 0021-8979

Paul, T. K. ; Bhattacharya, P. ; Bose, D. N. (1989) Laser-assisted deposition of bn films on InP for MIS applications Electronics Letters, 25 (23). pp. 1602-1603. ISSN 0013-5194

Bose, D. N. ; Ramprakash, Y. ; Basu, S. (1989) Characterization of n-InP surfaces before and after surface modification Materials Letters, 8 (9). pp. 364-368. ISSN 0167-577X

Basu, S. ; Roy, J. N. ; Bose, D. N. (1989) Characterization of grain boundary in polycrystalline n-InP grown by the gradient freeze method Materials Letters, 7 (9-10). pp. 359-362. ISSN 0167-577X

Bose, D. N. ; Hedge, M. S. ; Basu, S. ; Mandal , K. C. (1989) XPS investigation of CdTe surfaces: effect of Ru modification Semiconductor Science and Technology, 4 (10). p. 866. ISSN 0268-1242

Bose, D. N. ; Basu, S. ; Mandal, K. C. (1988) Characterization of chemically modified CdTe surfaces Thin Solid Films, 164 . pp. 13-19. ISSN 0040-6090

Mandal, K. C. ; Basu, S. ; Bose, D. N. (1988) CdTe photoelectrochemical solar cells- chemical modification of surfaces Bulletin of Materials Science, 10 (4). pp. 349-351. ISSN 0250-4707

Mandal, K. C. ; Basu, S. ; Bose, D. N. (1987) Correlation of fermi level shift with photovoltages at ruthenium-modified CdTe surfaces Journal of Solid State Chemistry, 71 (2). pp. 559-561. ISSN 0022-4596

Mandal, K. C. ; Basu, S. ; Bose, D. N. (1987) Effect of surface modification on sub-bandgap response of n-CdTe photoelectrodes Surface Science, 188 (1-2). pp. 235-240. ISSN 0039-6028

Mandal, K. C. ; Basu, S. ; Bose, D. N. (1987) Effects of surface modification on n-cadmium telluride photoelectrochemical solar cells The Journal of Physical Chemistry, 91 (15). pp. 4011-4013. ISSN 0022-3654

Bose, D. N. ; Holtz, M. (1987) Raman scattering studies of surface-modified CdTe Materials Letters, 05 (7-8). pp. 291-295. ISSN 0167-577X

Mazumdar, D. ; Bose, D. N. ; Parthasarathy, G. ; Gopal, E. S. R. (1987) High-pressure studies on lithium fast-ion conductors Journal of Materials Research, 2 (3). pp. 366-373. ISSN 0884-2914

Mandal, K. C. ; Basu, S. ; Bose, D. N. (1986) Surface-modified CdTe PEC solar cells Solar Cells, 18 (1). pp. 25-30. ISSN 0927-0248

Bose, D. N. ; Seishu, B. ; Parthasarathy, G. ; Gopal, E. S. R. (1986) Doping dependence of semiconductor-metal transition in InP at high pressures Proceedings of the Royal Society of London Series A: Mathematical, Physical & Engineering Sciences, 405 (1829). pp. 345-353. ISSN 0962-8444

Bose, D. N. ; Basu, S. ; Mandal, K. C. ; Mazumdar, D. (1986) Evidence for amphoteric behavior of Ru on CdTe surfaces Applied Physics Letters, 48 (7). pp. 472-474. ISSN 0003-6951

Sen, S. ; Bose, D. N. ; Hegde, M. S. (1985) Plasmon energies and dielectric constants of the III-VI semiconductors In₂Te₃ and Ga₂Te₃ Physica Status Solidi (B), 129 (1). K65-K67. ISSN 0370-1972

Bose, M. ; Basu, A. ; Mazumdar, D. ; Bose, D. N. (1985) Solid solutions of Li₃VO₄---Li₄GeO₄ as solid electrolytes: NMR and related studies Solid State Ionics, 15 (2). pp. 101-107. ISSN 0167-2738

Mazumdar, D. ; Bose, D. N. ; Mukherjee, M. L. (1984) Transport and dielectric properties of lisicon Solid State Ionics, 14 (02). pp. 143-147. ISSN 0167-2738

Ramprakash, Y. ; Bose, D. N. ; Basu, S. (1984) Transient response in n-InP PEC cells and effect of surface modification Surface Science, 145 (1). pp. 175-184. ISSN 0039-6028

Bose, D. N. ; Roy, J. N. ; Basu, S. (1984) Improved schottky barrier on n-InP by surface modification Materials Letters, 2 (5). pp. 455-457. ISSN 0167-577X

Bose, D. N. ; Majumdar, D. (1984) Lithium solid electrolytes and their applications Bulletin of Materials Science, 6 (2). pp. 223-230. ISSN 0250-4707

Sen, S. ; Bose, D. N. (1984) Electrical and optical properties of single crystal In₂Te₃ and Ga₂Te₃ Solid State Communications, 50 (01). pp. 39-42. ISSN 0038-1098

Bose, D. N. ; Ramprakash, Y. ; Basu, S. (1984) Effect of surface modification on subbandgap response of n-InP photoelectrodes Journal of the Electrochemical Society, 131 (04). pp. 850-852. ISSN 0013-4651

Bose, D. N. ; Parthasarathy, G. ; Mazumdar, D. ; Gopal, E. S. R. (1984) Resistivity maxima in lithium fast-ion conductors at high pressure Physical Review Letters, 53 (14). pp. 1368-1371. ISSN 0031-9007

Sen, S. ; Bose, D. N. (1983) Schottky barriers on single-crystal indium telluride Solid State Electronics, 26 (8). pp. 757-759. ISSN 0038-1101

Roy, J. N. ; Basu, S. ; Bose, D. N. (1983) Grain size dependence of mobility in polycrystalline n-indium phosphide Journal of Applied Physics, 54 (2). pp. 847-852. ISSN 0021-8979

Mazumdar, D. ; Bose, D. N. ; Mukherjee, L. L. ; Basu, A. ; Bose, M. (1983) ⁷Li NMR and related studies in LISICON system Materials Research Bulletin, 18 (1). pp. 79-86. ISSN 0025-5408

Bendapudi, Seishu ; Bose, D. N. (1983) Effect of high doping on the photoluminescence edge of GaAs and InP Applied Physics Letters, 42 (03). pp. 287-289. ISSN 0003-6951

Bose, D. N. ; Govindacharyulu, P. A. ; Banerjee, H. D. (1982) Large grain polycrystalline silicon from rice husk Solar Energy Materials, 7 (3). pp. 319-321. ISSN 0165-1633

Bose, D. N. ; Sen, S. ; Joshi, D. K. ; Vaidya, S. N. (1982) Resistivity studies on Ga₂Te₃ and In₂Te₃ under high pressures Materials Letters, 1 (2). pp. 61-63. ISSN 0167-577X

Mazumdar, D. ; Govindacharyulu, P. A. ; Bose, D. N. (1982) Electronic conductivity of AgI using D.C. polarization and charge transfer techniques Journal of Physics and Chemistry of Solids, 43 (9). pp. 933-940. ISSN 0022-3697

Roy, J. N. ; Basu, S. ; Bose, D. N. (1981) Low temperature growth of polycrystalline indium phosphide Solar Energy Materials, 5 (4). pp. 379-382. ISSN 0165-1633

Sen, S. ; Bose, D. N. (1981) Preparation and electrical properties of Ga₂Te₃ thin films Physica Status Solidi (A), 66 (02). K117-K119. ISSN 0031-8965

Bose, D. N. ; De Purkayastha, S. (1981) Dielectric and photoconducting properties of Ga₂Te₃ and In₂Te₃ crystals Materials Research Bulletin, 16 (6). pp. 635-642. ISSN 0025-5408

Bose, D. N. ; De Purkayastha, S. ; Mukherjee, J. K. (1980) The influence of the substrate temperature on the preparation of thin film In₂Te₃ Thin Solid Films, 74 (2). pp. 219-222. ISSN 0040-6090

Bose, D. N. ; Govindacharyulu, P. A. (1980) Physics of silver halides and their applications Bulletin of Materials Science, 2 (4). pp. 221-231. ISSN 0250-4707

Bose, D. N. ; Borgaonkar, S. R. ; Vedavathy, T. S. (1979) Measurement of magnetic properties of single crystal YIG by non-resonant method Bulletin of Materials Science, 1 (2). pp. 121-128. ISSN 0250-4707

Bose, D. N. ; Jani, B. J. (1979) Thin film amorphous semiconductor microwave switches Thin Solid Films, 57 (1). pp. 39-44. ISSN 0040-6090

Bose, D. N. ; Govindacharyulu, P. A. (1979) Photoconductivity in β-AgI Physical Review B, 19 (12). pp. 6532-6541. ISSN 0163-1829

Bose, D. N. ; Jani, B. J. (1977) Microwave modulation by amorphous-semiconductor switches Electronics Letters, 13 (16). pp. 451-452. ISSN 0013-5194

Govindacharyulu, P. A. ; Bose, D. N. (1977) Drift mobility of holes in single-crystal β-AgI Journal of Applied Physics, 48 (3). pp. 1381-1382. ISSN 0021-8979

Katti, V. R. ; Govindacharyulu, P. A. ; Bose, D. N. (1972) Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films Thin Solid Films, 14 (1). pp. 143-148. ISSN 0040-6090

Bhalla, A. S. ; Bose, D. N. ; White, E. W. ; Cross, L. E. (1971) Precise X-ray determination of small homogeneous strains applied to the direct measurement of piezoelectric constants Physica Status Solidi (A), 7 (2). pp. 335-339. ISSN 0031-8965

Bose, D. N. ; Henisch, H. K. (1970) Thermoluminescence in boron nitride powders Journal of the American Ceramic Society, 53 (5). pp. 281-282. ISSN 0002-7820

Bose, D. N. ; Henisch, H. K. ; Toole, J. M. (1969) Pyroelectric detection of X-ray absorption by tourmaline Solid-State Electronics, 12 (2). pp. 65-68. ISSN 0038-1101

Bose, D. N. ; Henisch, H. K. (1968) Radiation dosimetry by current glow in diamond Solid-State Electronics, 11 (3). pp. 273-278. ISSN 0038-1101

Bose, D. N. (1968) Effect of low energy electron and UV irradiations on the charge condition of etched germanium surfaces Physica Status Solidi (B), 27 (1). pp. 325-331. ISSN 0370-1972

Bose, D. N. (1968) Thermoluminescence and thermally stimulated currents in bismuth doped ZnS crystals Physica Status Solidi (B), 30 (1). K57-K60. ISSN 0370-1972

Bose, D. N. (1967) Field-effect measurements on silicon carbide Physica Status Solidi (B), 24 (2). K165-K166. ISSN 0370-1972

Ghosh, S. ; Bose, D. N. (1940) Plasma-enhanced chemical vapour deposited silicon-nitride films for interface studies Journal of Materials Science: Materials in Electronics, 5 (4). pp. 193-198. ISSN 0957-4522