Items where Author is "Pietsch, U."

Article

Grenzer, J. ; Mucklich, A. ; Grigorian, S. ; Pietsch, U. ; Datta, D. P. ; Chini, T. K. ; Hazra, S. ; Sanyal, M. K. (2007) High-temperature induced nano-crystal formation in ion beam-induced amorphous silicon ripples Physica Status Solidi A, 204 (8). pp. 2555-2560. ISSN 0031-8965

Grigorian, S. ; Pietsch, U. ; Grenzer, J. ; Datta, D. P. ; Chini, T. K. ; Hazra, S. ; Sanyal, M. K. (2006) Microstructural anisotropy at the ion-induced rippled amorphous-crystalline interface of silicon Applied Physics Letters, 89 (23). Article ID 231915. ISSN 0003-6951

Grigoriana, S. ; Pietsch, U. ; Grenzer, J. ; Datta, D. P. ; Chini, T. K. ; Hazra, S. ; Sanyal, M. K. (2006) Microstructural anisotropy at the ion-induced rippled amorphouscrystalline interface of silicon Applied Physics Letters, 89 (23). 231915_1-231915_3. ISSN 0003-6951

Bhattacharya, M. ; Sanyal, M. K. ; Geue, Th. ; Pietsch, U. (2005) Glass transition in ultrathin polymer films: a thermal expansion study Physical Review E, 71 (4). 041801_1-041801_5. ISSN 1063-651X

Mukhopadhyay, M. K. ; Sanyal, M. K. ; Datta, A. ; Mukherjee, M. ; Geue, Th. ; Grenzer, J. ; Pietsch, U. (2004) Transition from two-dimensional to three-dimensional melting in Langmuir-Blodgett films Physical Review B: Condensed Matter and Materials Physics, 70 (24). 245408_1-245408_9. ISSN 1098-0121

Hazra, S. ; Chini, T. K. ; Sanyal, M. K. ; Grenzer, J. ; Pietsch, U. (2004) Ripple structure of crystalline layers in ion-beam-induced Si wafers Physical Review B: Condensed Matter and Materials Physics, 70 (12). 121307_1-121307_4. ISSN 1098-0121

Bhattacharya, M. ; Mukherjee, M. ; Sanyal, M. K. ; Geue, Th. ; Grenzer, J. ; Pietsch, U. (2003) Energy dispersive X-ray reflectivity technique to study thermal properties of polymer films Journal of Applied Physics, 94 (5). pp. 2882-2887. ISSN 0021-8979

Mukherjee, M. ; Bhattacharya, M. ; Sanyal, M. K. ; Geue, Th. ; Grenzer, J. ; Pietsch, U. (2002) Reversible negative thermal expansion of polymer films Physical Review E, 66 (6). 061801_1-061801_4. ISSN 1063-651X