Items where Author is "Inani, A."

Inani, A. ; Rao, V. R. ; Cheng, B. ; Zeitzoff, P. ; Woo, J. C. S. (1999) Capacitance degradation due to fringing field in deep sub-micron MOSFETs with high-K gate dielectrics 29th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium . pp. 160-163.

Cheng, B. ; Cao, M. ; Rao, R. ; Inani, A. ; Vande Voorde, P. ; Greene, W. M. ; Stork, J. M. C. ; Yu, Zhiping ; Zeizoff, P. M. ; Woo, J. C. S. (1999) The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs IEEE Transactions on Electron Devices, 46 (7). pp. 1537-1544. ISSN 0018-9383

Cheng, Baohong ; Inani, A. ; Rao, R. ; Woo, J. C. S. (1999) Channel engineering for high speed sub-1.0 V power supply deep sub-micron CMOS Technical Digest, 1999 Symposium on VLSI Technology, Kyoto, Japan . pp. 69-70.

Inani, A. ; Ramgopal Rao, V. ; Cheng, B. ; Cao, M. ; Voorde, P. V. ; Greene, W. ; Woo, J. C. S. (1998) Performance considerations in using high-k dielectrics for deep sub-micron MOSFETs Proceedings of the Solid state Devices and Materials (SSDM) Research Conference, Hiroshima, Japan . pp. 94-95.