A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique

Mahapatra, S. ; Parikh, C. D. ; Ramagopal Rao, V. ; Viswanathan, C. R. ; Vasi, J. (2000) A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique IEEE Transactions on Electron Devices, 47 (1). pp. 171-177. ISSN 0018-9383

[img]
Preview
PDF - Publisher Version
231kB

Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...

Related URL: http://dx.doi.org/10.1109/16.817583

Abstract

A novel simulation-independent charge pumping (CP) technique is employed to accurately determine the spatial distributions of interface (Nit) and oxide (N0t) traps in hot-carrier stressed MOSFETs. Direct separation of Nit and N0t is achieved without using simulation, iteration, or neutralization. Better immunity from measurement noise is achieved by avoiding numerical differentiation of data. The technique is employed to study the temporal buildup of damage profiles for a variety of stress conditions. The nature of the generated damage and trends in its position are qualitatively estimated from the internal electric field distributions obtained from device simulations. The damage distributions are related to the drain current degradation and well-defined trends are observed with the variations in stress biases and stress time. Results are presented which provide fresh insight into the hot-carrier degradation mechanisms.

Item Type:Article
Source:Copyright of this article belongs to IEEE.
ID Code:41573
Deposited On:30 May 2011 09:26
Last Modified:17 May 2016 23:15

Repository Staff Only: item control page