Items where Author is "Parui, Jayanta"

Article

Parui, Jayanta ; Krupanidhi, S. B. (2010) Effect of La modification on antiferroelectricity and dielectric phase transition in sol-gel grown PbZrO₃ thin films Solid State Communications, 150 (37-38). pp. 1755-1759. ISSN 0038-1098

Aparna, Shetty ; Jali, V. M. ; Sanjeev, Ganesh ; Parui, Jayanta ; Krupanidhi, S. B. (2010) Dielectric properties of electron irradiated PbZrO₃ thin films Bulletin of Materials Science, 33 (3). pp. 191-196. ISSN 0250-4707

Singh, Jitendra ; Kalghatgi, A. T. ; Parui, Jayanta ; Krupanidhi, S. B. (2010) High-temperature dielectric response in pulsed laser deposited Bi_1.5Zn_1.0Nb_1.5O₇ thin films Journal of Applied Physics, 108 (5). 054106_1-054106_6. ISSN 0021-8979

Saranya, D. ; Chaudhuri, Ayan Roy ; Parui, Jayanta ; Krupanidhi, S. B. (2009) Electrocaloric effect of PMN-PT thin films near morphotropic phase boundary Bulletin of Materials Science, 32 (3). pp. 259-262. ISSN 0250-4707

Parui, Jayanta ; Krupanidhi, S. B. (2008) Electrocaloric effect in antiferroelectric PbZrO₃ thin films Physica Status Solidi - Rapid Research Letters, 2 (5). pp. 230-232. ISSN 1862-6254

Parui, Jayanta ; Krupanidhi, S. B. (2008) Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO₃ thin films Applied Physics Letters, 92 (19). 192901_1-192901_3. ISSN 0003-6951

Parui, Jayanta ; Krupanidhi, S. B. (2008) Slim P-E hysteresis loop and anomalous dielectric response in sol-gel derived antiferroelectric PbZrO₃ thin films Journal of Applied Physics, 104 (2). 024107_1-024107_11. ISSN 0021-8979

Kumari, Neelam ; Parui, Jayanta ; Varma, K. B. R. ; Krupanidhi, S. B. (2006) C-V studies on metal-ferroelectric bismuth vanadate (Bi₂VO_5.5)-semiconductor structure Solid State Communications, 137 (10). pp. 566-569. ISSN 0038-1098

Parui, Jayanta ; Krupanidhi, S. B. (2006) Dielectric properties of (110) oriented PbZrO₃ and La-modified PbZrO₃ thin films grown by sol-gel process on Pt(111)/Ti/SiO₂/Si substrate Journal of Applied Physics, 100 (4). 044102_1-044102_9. ISSN 0021-8979