Items where Author is "Ahmed, K."

Article

Rastogi, R. G. ; Ahmed, K. (2010) Preliminary reverse impulse in SC (Y) at off - equatorial stations in India Indian Journal of Radio and Space Physics, 39 (4). pp. 203-207. ISSN 0367-8393

Rastogi, R. G. ; Janardhan, P. ; Ahmed, K. ; Das, A. C. ; Bisoi, Susanta K. (2010) Unique observations of a geomagnetic SI⁺ - SI^- pair: Solar sources and associated solar wind fluctuations Journal of Geophysical Research - A: Space Physics, 115 (A12). pp. 1-17. ISSN 0196-6928

Conference or Workshop Item

Sandhya, C. ; Ganguly, U. ; Singh, K. K. ; Singh, P. K. ; Olsen, C. ; Seutter, S. M. ; Hung, R. ; Conti, G. ; Ahmed, K. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2008) Nitride engineering and the effect of interfaces on Charge Trap Flash performance and reliability In: 2008 IEEE International Reliability Physics Symposium, IRPS 2008, 27 April-1 May, 2008, Phoenix, AZ, USA.

Kapila, G. ; Goyal, N. ; Maheta, V. D. ; Olsen, C. ; Ahmed, K. ; Mahapatra, S. (2008) A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles In: 2008 IEEE International Conference on Electron Devices Meeting (IEDM), 15-17 Dec, 2008, San Francisco, CA, USA.

Sandhya, C. ; Ganguly, U. ; Singh, K. K. ; Olsen, C. ; Seutter, S. M. ; Conti, G. ; Ahmed, K. ; Krishna, N. ; Vasi, J. ; Mahapatra, S. (2008) The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2008, 7-11 July, 2008, Singapore, Singapore.

Kumar, E. N. ; Maheta, V. D. ; Purawat, S. ; Islam, A. E. ; Olsen, C. ; Ahmed, K. ; Alam, M. A. ; Mahapatra, S. (2007) Material dependence of NBTI physical mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A comprehensive study by Ultra-fast On-the-fly (UF-OTF) I_DLIN technique In: 2007 IEEE International Electron Devices Meeting, IEDM.

Mahapatra, S. ; Ahmed, K. ; Varghese, D. ; Islam, A. E. ; Gupta, G. ; Madhav, L. ; Saha, D. ; Alam, M. A. (2007) On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy? In: 2007 45th Annual IEEE International Reliability Physics Symposium, 15-19 April, 2007, Phoenix, AZ, USA.

Islam, A. E. ; Gupta, G. ; Mahapatra, S. ; Krishnan, A. T. ; Ahmed, K. ; Nouri, F. ; Oates, A. ; Alam, M. A. (2006) Gate leakage vs. NBTI in plasma nitrided oxides: characterization, physical principles and optimization In: 2006 International Electron Devices Meeting, IEDM '06, 11-13 Dec, 2006, San Francisco, CA, USA.

Varghese, D. ; Saha, D. ; Mahapatra, S. ; Ahmed, K. ; Nouri, F. ; Alam, M. (2005) On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory and implications In: 2005 IEEE International Electron Devices Meeting, IEDM Technical Digest, 5-5 Dec, 2005, Washington, DC, USA.