Bhaumik, Saikat ; Pal, Amlan J. (2013) All-inorganic light-emitting diodes based on solution-processed nontoxic and earth-abundant nanocrystals IEEE Journal of Quantum Electronics, 49 (3). pp. 325-330. ISSN 0018-9197
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Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...
Related URL: http://dx.doi.org/10.1109/JQE.2013.2245404
Abstract
We fabricate and characterize light-emitting diodes (LEDs) based on thin-films of NiO, Mn-doped ZnS, and n-ZnO nanoparticles acting as hole-transporting, emitting, and electron-transporting layers, respectively. We vary the thickness of the individual layers and record current-voltage and luminance-current characteristics. By examining the fitting of the current-voltage characteristics of these all-inorganic LEDs, we find that the hole- and electron-transporting layers lower barrier heights for hole- and electron-injection from the respective electrodes that correspondingly improve electro-luminescence (EL) output. The photoluminescence emission of Mn-doped ZnS nanoparticles and EL emission of the LEDs resembled implying that excitons formed in the doped nanostructures followed by a radiative transition between d-states of Mn-ions.
Item Type: | Article |
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Source: | Copyright of this article belongs to Institute of Electrical and Electronic Engineers. |
ID Code: | 98360 |
Deposited On: | 04 Jun 2014 12:17 |
Last Modified: | 04 Jun 2014 12:17 |
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