Sinha, K. P. ; Jindal, Apoorv (2014) On the mechanism of room temperature superconductivity in substitutionally doped graphene Solid State Communications, 180 . pp. 44-45. ISSN 0038-1098
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.ssc.2013.11.009
Related URL: http://dx.doi.org/10.1016/j.ssc.2013.11.009
Abstract
A combined mechanism involving phononic and electronic processes is suggested for superconductivity in substitutionally doped graphene. The electronic mechanism is similar to the one used for doped fullerene system, MxC60 (M=K, Rb, etc.) and triggered by bond polarization due to doped impurities such as B or Al. It is found that on increasing the doping, the superconducting critical temperature can be raised to room temperature. The details of the combined model are given along with the predicted values of TC.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Graphene; B. Boron doping; C. Phonon and bond-polarization mechanism; D. High-temperature superconductivity |
| ID Code: | 98213 |
| Deposited On: | 22 Apr 2014 12:08 |
| Last Modified: | 22 Apr 2014 12:08 |
Repository Staff Only: item control page
