Dhara, S. ; Das, C. R. ; Hsu, H. C. ; Raj, Baldev ; Bhaduri, A. K. ; Chen, L. C. ; Chen, K. H. ; Albert, S. K. ; Ray, Ayan (2008) Recrystallization of epitaxial GaN under indentation Applied Physics Letters, 92 (14). p. 143114. ISSN 0003-6951
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Official URL: http://scitation.aip.org/content/aip/journal/apl/9...
Related URL: http://dx.doi.org/10.1063/1.2907851
Abstract
We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10GPa using a Berkovich indenter. “Pop-in” burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) ∼570cm−1 in the as-grown epi-GaN is redshifted to stress free value ∼567cm−1 in the indented region. Evolution of A1(TO) and E1(TO)phonon modes are also reported to signify the recrystallization process.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 97975 |
| Deposited On: | 23 Jan 2014 05:45 |
| Last Modified: | 23 Jan 2014 05:45 |
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