Jose, Feby ; Ramaseshan, R. ; Dash, S. ; Sundari, Tripura S. ; Jain, Deepti ; Ganesan, V. ; Chandramohan, P. ; Srinivasan, M. P. ; Tyagi, A. K. ; Raj, Baldev (2011) Significance of Al on the morphological and optical properties of Ti1−xAlxN thin films Materials Chemistry and Physics, 130 (3). pp. 1033-1037. ISSN 0254-0584
Full text not available from this repository.
Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.matchemphys.2011.07.083
Abstract
TiN and Ti1−xAlxN thin films with different aluminum concentrations (x = 0.35, 0.40, 0.55, 0.64 and 0.81) were synthesized by reactive magnetron co-sputtering technique. The structure, surface morphology and optical properties were examined using Grazing Incidence X-ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Raman spectroscopy and spectroscopic ellipsometry, respectively. The structure of the films were found to be of rocksalt type (NaCl) for x = 0.0–0.64 and X-ray amorphous for x = 0.81. AFM topographies show continuous mound like structure for the films of x between 0.0 and 0.64, whereas the film with x = 0.81 showed smooth surface with fine grains. Micro-Raman spectroscopic studies indicate structural phase separation of AlN from TiAlN matrix for x > 0.40. Ti1−xAlxN has the tendency for decomposition with the increase of Al concentration whereas c-TiN and hcp-AlN are stable mostly. The optical studies carried out by spectroscopic ellipsometry measurements showed a change from metallic to insulating behavior with the increase in x. These films are found to be an insulator beyond x = 0.81.
Item Type: | Article |
---|---|
Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Sputtering; Thin films; Grazing Incidence X-ray Diffraction; Atomic Force Microscopy; Raman Spectroscopy and scattering; Ellipsometers |
ID Code: | 97955 |
Deposited On: | 11 Jan 2014 04:50 |
Last Modified: | 11 Jan 2014 04:50 |
Repository Staff Only: item control page