Lal, Manohar ; Goyal, Navdeep ; Grover, A. K. ; Vohra, Anil (1993) Photoelectrical properties of CdZnSe2 Japanese Journal of Applied Physics, 32 . pp. 633-634. ISSN 0021-4922
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Official URL: http://jjap.jsap.jp/link?JJAPS/32S3/633
Abstract
An investigation of photoconductivity in films of CdZnSe2 prepared by solution growth technique is reported. The measurements were carried out at different temperatures and excitation intensities. Photoconductivity is found to increase exponentially in the temperature range (303–343 K). The value of Iph/Id is found to decrease with an increase in temperature. In order to investigate the nature of decay of photocurrent, transient photoconductivity measurements have also been carried out at various temperatures and excitation intensities. The results are well explained by recombination of excess D° states in localized-localized recombination.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Pure and Applied Physics. |
| ID Code: | 97325 |
| Deposited On: | 01 Feb 2013 10:54 |
| Last Modified: | 01 Feb 2013 10:54 |
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