Stüβer, N. ; Barth, M. ; Güntherodt, G. ; Jayaraman, A. (1981) Electron-phonon coupling and monopolar charge fluctuations in intermediate valence TmSe Solid State Communications, 39 (9). pp. 965-968. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1098(81)90066-1
Abstract
Polarized Raman spectra of intermediate valence TmxSe (x=0.95, 1.00, 1.01) have been measured. The scattering intensity is interpreted in terms of a one-phonon density of states weighted by the electron-phonon matrix element. The latter is described in a model of phonon-induced local, intraionic charge deformabilities. In the symmetry-analysed Raman intensities of A1g character, two peaks near 8.8meV and 21.9meV are attributed to monopolar charge deformations of the valence-fluctuating Tm ions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 96021 |
| Deposited On: | 30 Nov 2012 07:06 |
| Last Modified: | 30 Nov 2012 07:06 |
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