Jayaraman, A. ; DiDomenico, M. ; Wemple, S. H. (1969) Electron scattering by critical point fluctuations in ABO3 ferroelectric semiconductors and related Raman studies Materials Research Bulletin, 4 (8). pp. 495-504. ISSN 0025-5408
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0025-5408(69)90108-1
Abstract
From the pressure dependence of the conductivity and the static dielectric constant in perovskite oxide semiconductors (SrTiO3, KTaO3 and BaTiO3), it is deduced that the electron scattering in these materials is mainly due to the soft TO phonon mode. The TO phonons couple to the conduction band through a polarization potential interaction. This model requires the existence of polarization fluctuations in the lattice. Raman studies provide experimental evidence for the presence of polarization fluctuations.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 95989 |
| Deposited On: | 29 Nov 2012 11:05 |
| Last Modified: | 29 Nov 2012 11:05 |
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