Effect of hydrostatic pressure on p-n junction characteristics and the pressure variation of the band gap

Abstract

The effect of hydrostatic pressure on p‐n junctions of Si and GaAs in which both ideal and generation‐recombination currents were present has been investigated. It is shown that the pressure coefficients of the energy gap can be obtained directly from the pressure‐induced shifts in the forward‐bias voltage, measured at a constant total junction current. Presently determined pressure coefficients of −1.5±0.005×10⁻³ eV∕kbar for Si and 10.9±0.1×10³ eV∕kbar for GaAs are in good agreement with values obtained for Si and GaAs by other methods. In the case of GaAs, the pressure‐induced shift in the forward‐bias voltage reverses sign when the conduction‐band minimum shifts (to the [100] valleys) at high pressure. The effect of pressure on the reverse breakdown voltage for Si junctions has also been determined. The results seem to offer some support to the theory of Hauser and Wortman.