Shibata, Hiroyuki ; Ohta, Hiromichi ; Nemoto, Takashi ; Nagayama, Shun ; Waseda, Yoshio ; Fujii, Katsushi ; Jacob, Thomas K. (2010) Measurement for thermal effusivity of AlxGa1-xN alloys using thermoreflectance with periodic heating High Temperature Materials and Processes, 29 (5-6). pp. 515-522. ISSN 0334-6455
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Official URL: http://www.degruyter.com/view/j/htmp.2010.29.5-6/h...
Related URL: http://dx.doi.org/10.1515/HTMP.2010.29.5-6.515
Abstract
AlxGa1-xN alloys with x=0.375, 0.398, 0.401, 0.592 and 0.696 were deposited on sapphire substrate by the hydride-vapor-phase epitaxy (HVPE) method. Thermal effusivity measurements were carried out on AlxGa1-xN alloys using a thermal microscope at room temperature. The lag between sinusoidal heating laser wave and thermoreflectance wave was used to measure the thermal diffusivity. Thermal conductivity values of the AlxGa1-xN alloys were also obtained as a function of AIN mole fraction in the alloy. The thermal conductivity was found to decrease with increasing AIN fraction and the experimental data agree with values estimated using the virtual crystal model.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Walter de Gruyter GmbH & Co. KG. |
| ID Code: | 95069 |
| Deposited On: | 02 Nov 2012 05:17 |
| Last Modified: | 02 Nov 2012 05:17 |
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