Formation of ⊥c texture of tungsten disulfide thin films with nickel

Abstract

The formation of Ic texture of WS₂ thin films by solid state reaction between the spray deposited WO₃ and gaseous sulfur vapours with Ni interfacial layer has been reported. X-ray diffraction technique has been used to measure the degree of preferred orientation and texture of WS₂ films. Scanning electron microscopy, transmission electron microscopy and atomic force microscopy have been used to characterize the microstructure and morphology. The electronic structure and chemical composition was studied using X-ray photoelectron spectroscopy. The WS₂ films comprise single crystalline quality hexagonal crystallites of 15 µm × 15 µm size with their basal planes parallel to the substrate. The film consists of turbostratic stacking sequence of 2H and 3R polytypes of WS₂. The tungsten-to-sulfur ratio was estimated to be 1:1.8. The various qualitative models used to explain promotional effects are briefly outlined and the plausible underlying mechanism of formation of Ic texture with nickel, in this study, is given.