Dastidar, P. R. ; Ravindran, K. ; Pant, H. C. (1969) Gettering of impurities from gallium arsenide IEE Electronics Letters, 5 (22). pp. 553-554. ISSN 0013-5194
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1049/el:19690416
Related URL: http://dx.doi.org/10.1049/el:19690416
Abstract
Impurities have been gettered from gallium arsenide using a glass surface layer. Mobility has been found to increase by a factor of two to three. Injection-laser threshold current density at 77K reduced from 750Acm-2 to 425Acm-2.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institution of Engineering and Technology. |
| ID Code: | 9309 |
| Deposited On: | 02 Nov 2010 12:31 |
| Last Modified: | 30 May 2011 06:43 |
Repository Staff Only: item control page
