Deb, B. M. ; Chandorkar, A. N. (1995) Theory of hopping transport of holes in amorphous SiO2 Journal of Applied Physics, 77 (10). pp. 5248-5255. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v77/i10/p5248...
Related URL: http://dx.doi.org/10.1063/1.359276
Abstract
A quantum-mechanical theory of hole transport in SiO2 is developed based on modeling of the oxide as an array of time-dependent δ -function potential well distribution. Holes undergo a variable range hopping transport which is dispersive in nature. The oxide, being an insulator, involves a maximum cutoff phonon frequency of 1014-1015 s-1. The Schrodinger equation is solved along with the Poisson equation using a piecewise linear internal field. The theory is applied to metal-oxide-semiconductor structures subjected to a short radiation pulse.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 9228 |
| Deposited On: | 29 Oct 2010 11:13 |
| Last Modified: | 31 May 2011 04:56 |
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