Likovich, Edward ; Russell, Kasey ; Yi, Wei ; Narayanamurti, Venkatesh ; Ku, Keh-Chiang ; Zhu, Meng ; Samarth, Nitin (2009) Magnetoresistance in an asymmetric Ga1-xMnxAs resonant tunneling diode Physical Review B: Condensed Matter and Materials Physics, 80 (20). 201307_1-201307_4. ISSN 1098-0121
Full text not available from this repository.
Official URL: http://prb.aps.org/abstract/PRB/v80/i20/e201307
Related URL: http://dx.doi.org/10.1103/PhysRevB.80.201307
Abstract
In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shift of negative differential resistance features to higher bias as the relative alignment of the GaMnAs layer magnetizations is changed from parallel to antiparallel. Our observations agree with recent predictions from a theoretical analysis of a similar n-type structure by Ertler and Fabian, and our results suggest that further investigation into ferromagnetic RTD structures may result in significantly enhanced magnetoresistance.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 87560 |
| Deposited On: | 19 Mar 2012 12:48 |
| Last Modified: | 19 Mar 2012 12:48 |
Repository Staff Only: item control page
