Size-dependent impurity activation energy in GaN nanowires

Yoon, J. ; Girgis, A. M. ; Shalish, I. ; Ram-Mohan, L. R. ; Narayanamurti, V. (2009) Size-dependent impurity activation energy in GaN nanowires Applied Physics Letters, 94 (14). 142102_1-142102_3. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v94/i14/p1421...

Related URL: http://dx.doi.org/10.1063/1.3115769

Abstract

The effect of the surrounding dielectric on the conductivity of GaN nanowires is measured experimentally. The two following configurations are considered: bare suspended and SiO2-coated nanowires. The measured conductivity is consistently fitted by two exponential terms with different activation energies, indicating multichannel conduction. The larger energy, attributed to activation of impurities into the conduction subband, shows essentially inverse dependence on nanowire radius, consistent with the dielectric confinement effect. This agrees with calculated values from finite element analysis. The smaller energy is independent of the nanowire radius, suggesting a surface conduction channel.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Conduction Bands; Electrical Conductivity; Finite Element Analysis; Gallium Compounds; III-V Semiconductors; Impurity States; Nanowires; Semiconductor Quantum Wires; Wide Band Gap Semiconductors
ID Code:87557
Deposited On:19 Mar 2012 12:49
Last Modified:19 Mar 2012 12:49

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