Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces

Yi, W. ; Kaya, I. I. ; Altfeder, I. B. ; Appelbaum, I. ; Chen, D. M. ; Narayanamurti, V. (2005) Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces Review of Scientific Instruments, 76 (6). 063711_1-063711_4. ISSN 0034-6748

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Official URL: http://rsi.aip.org/resource/1/rsinak/v76/i6/p06371...

Related URL: http://dx.doi.org/10.1063/1.1938969

Abstract

Using a dual-probe scanning tunneling microscope, we have performed three-terminal ballistic electron emission spectroscopy on Au/GaAs(100) by contacting the patterned metallic thin film with one tip and injecting ballistic electrons with another tip. The collector current spectra agree with a Monte-Carlo simulation based on modified planar tunneling theory. Our results suggest that it is possible to study nanoscale metal-semiconductor interfaces without the requirement of an externally-contacted continuous metal thin film.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Scanning Tunnelling Microscopy; Nanostructured Materials; Semiconductor-metal Boundaries; Field Emission Electron Microscopy; Metallic Thin Films; Monte Carlo Methods; Tunnelling; Gold; Gallium Arsenide; III-V Semiconductors; Interface Structure
ID Code:87554
Deposited On:19 Mar 2012 12:48
Last Modified:19 Mar 2012 12:48

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