Appelbaum, Ian ; Russell, K. J. ; Shalish, I. ; Narayanamurti, V. ; Hanson, M. P. ; Gossard, A. C. (2004) Ballistic hole emission luminescence Applied Physics Letters, 85 (12). pp. 2265-2267. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v85/i12/p2265...
Related URL: http://dx.doi.org/10.1063/1.1793347
Abstract
Using a method complementary to ballistic electron emission luminescence (BEEL), we demonstrate tunnel-junction injection of sub-band-gap hot holes into the valence band of a semiconductor heterostructure to generate band-gap luminescence. This mechanism can be used in a scanning-probe geometry for the development of a simultaneous hole transport and luminescence microscopy of p-type Schottky devices.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Aluminium Compounds; Gallium Arsenide; Silicon; Beryllium; III-V Semiconductors; Elemental Semiconductors; Semiconductor Quantum Wells; Semiconductor Heterojunctions; Quantum Well Devices; Luminescent Devices; Tunnel Transistors; Ballistic Transport; Valence Bands; Energy Gap; Quantum Confined Stark Effect |
| ID Code: | 87551 |
| Deposited On: | 19 Mar 2012 12:41 |
| Last Modified: | 19 Mar 2012 12:41 |
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