Yi, Wei ; Appelbaum, Ian ; Russell, K. J. ; Narayanamurti, V. ; Hanson, M. P. ; Gossard, A. C. (2004) Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure Applied Physics Letters, 85 (11). pp. 1990-1992. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v85/i11/p1990...
Related URL: http://dx.doi.org/10.1063/1.1790595
Abstract
We present ballistic electron emission luminescence (BEEL) spectroscopy measurements of an InAs quantum dot (QD) heterostructure based on three-terminal hot electron injection using a scanning tunneling microscope (STM) and a planar tunnel-junction transistor. Due to higher injected current, the planar transistors allow us to perform wavelength spectroscopy of the emitted luminescence, which resolves both quantum-confined Stark-shifted QD luminescence near 1.34 eV and bulk GaAs luminescence at 1.48 eV. This facilitates interpretation of STM BEEL spectra as a function of collector voltage bias. By freezing out the collector leakage current at low temperatures, consistent collector-current spectra are acquired with both STM and planar transistors.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Indium Compounds; III-V Semiconductors; Semiconductor Quantum Dots; Semiconductor Heterojunctions; Electroluminescence; Quantum Confined Stark Effect; Field Emission Electron Microscopy; Scanning Tunnelling Microscopy; Ballistic Transport; Electron Field Emission |
| ID Code: | 87550 |
| Deposited On: | 19 Mar 2012 12:42 |
| Last Modified: | 19 Mar 2012 12:42 |
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