Martinez, R. E. ; Appelbaum, I. ; Reddy, C. V. ; Sheth, R. ; Russell, K. J. ; Narayanamurti, V. ; Ryou, J.-H. ; Chowdhury, U. ; Dupuis, R. D. (2002) Electron transport through strongly coupled AlInP/GaInP superlattices Applied Physics Letters, 81 (19). pp. 3576-3578. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v81/i19/p3576...
Related URL: http://dx.doi.org/10.1063/1.1519350
Abstract
Using ballistic-electron-emission spectroscopy, electron transport through the principal (Γ c,Lc) miniband of an (Al0.5In0.5P)11/(Ga0.5In0.5P)10 superlattice in the strong-coupling regime has been observed. Second derivative spectra of experimental data and Monte Carlo simulations were in agreement.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Aluminium Compounds; Indium Compounds; Gallium Compounds; III-V Semiconductors; Semiconductor Superlattices; Conduction Bands; Monte Carlo Methods; Field Emission Electron Microscopy |
| ID Code: | 87541 |
| Deposited On: | 19 Mar 2012 12:40 |
| Last Modified: | 19 Mar 2012 12:40 |
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