Mani, R. G. ; Smet, J. H. ; von Klitzing, K. ; Narayanamurti, V. ; Johnson, W. B. ; Umansky, V. (2003) Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland .
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Abstract
Oscillations of the resistance observed under electromagnetic wave excitation in the high mobility GaAs/AlGaAs 2DES are examined as a function of the radiation frequency and the power, utilizing an empirical lineshape based on exponentially damped sinusoids. The fit-analysis indicates the resistance oscillation frequency, F, increases with the radiation frequency, n, at the rate dF/dn = 2.37 mTesla/GHz; the damping parameter, a, is approximately independent of n at constant power; and the amplitude, A, of the oscillations grows slowly with the incident power, at a constant temperature and frequency. The lineshape appears to provide a good description of the data.
Item Type: | Article |
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Source: | Copyright of this article belongs to 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland. |
ID Code: | 87539 |
Deposited On: | 19 Mar 2012 12:41 |
Last Modified: | 19 May 2016 02:49 |
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