Appelbaum, Ian ; Wang, Tairan ; Fan, Shanhui ; Joannopoulos, J. D. ; Narayanamurti, V. (2001) Can silicon dimers form logic gates? Nanotechnology, 12 (3). pp. 391-393. ISSN 0957-4484
Full text not available from this repository.
Official URL: http://iopscience.iop.org/0957-4484/12/3/330
Related URL: http://dx.doi.org/10.1088/0957-4484/12/3/330
Abstract
We have performed density functional theory calculations to show how a tungsten scanning probe can mediate the interactions between bistable Si(100) surface dimers. Interpreting the state of each dimer as a bit of information, we demonstrate the use of this mediated interaction to construct a NOR logic gate.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 87536 |
| Deposited On: | 19 Mar 2012 12:39 |
| Last Modified: | 19 Mar 2012 12:39 |
Repository Staff Only: item control page
