Reddy, C. V. ; Narayanamurti, V. ; Ryou, J. H. ; Chowdhury, U. ; Dupuis, R. D. (2000) Imaging and local current transport measurements of AlInP quantum dots grown on GaP Applied Physics Letters, 76 (11). pp. 1437-1439. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v76/i11/p1437...
Related URL: http://dx.doi.org/10.1063/1.126056
Abstract
Individual AlInP self-assembled quantum dots grown on a (100) GaP substrate are imaged and probed using ballistic electron emission microscopy (BEEM). The excellent nanometer scale lateral resolution of BEEM is utilized to inject carriers directly into a single quantum dot, and thus, current transport through the dot investigated without any direct electrical contact. The BEEM spectra taken on and off the dot revealed a local conduction-band offset between GaP and AlInP with a barrier height of Δ Ec -0.13± 0.01 eV.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Aluminium Compounds; Indium Compounds; III-V Semiconductors; Semiconductor Quantum Dots; Field Emission Electron Microscopy; Conduction Bands; Interface States |
| ID Code: | 87527 |
| Deposited On: | 19 Mar 2012 06:58 |
| Last Modified: | 19 Mar 2012 06:58 |
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