Kozhevnikov, M. ; Narayanamurti, V. ; Mascarenhas, A. ; Zhang, Y. ; Olson, J. M. ; Smith, D. L. (1999) Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy Applied Physics Letters, 75 (8). pp. 1128-1130. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v75/i8/p1128_...
Related URL: http://dx.doi.org/10.1063/1.124618
Abstract
We have analyzed the second voltage derivative (SD) of the ballistic electron emission microscopy (BEEM) spectra of GaInP2. We associate two peaks observed in the SD-BEEM spectra of disordered GaInP2 on n+ GaAs substrate with the Γ and L conduction minima, Δ (Γ-L)- 0.35eV. An additional third peak appearing in the SD-BEEM spectrum of ordered GaInP2(η -0.5) is associated with the L-band splitting due to the ordering-induced "folding" of one of the four L valleys onto the Γ point. According to our results, this splitting is -0.13 eV.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Compounds; Indium Compounds; Ternary Semiconductors; Many-valley Semiconductors; Field Emission Electron Microscopy; MOCVD Coatings; Semiconductor Thin Films; Gallium Phosphides; Indium Phosphides; Electron Microscopy; Electronic Structure; Electron Emission; Order-disorder Transformations; Heterojunctions |
| ID Code: | 87524 |
| Deposited On: | 19 Mar 2012 06:57 |
| Last Modified: | 19 Mar 2012 06:57 |
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