Staggered to straddling band lineups in InAs/Al(As, Sb)

Bhargava, S. ; Blank, H.-R. ; Hall, E. ; Chin, M. A. ; Kroemer, H. ; Narayanamurti, V. (1999) Staggered to straddling band lineups in InAs/Al(As, Sb) Applied Physics Letters, 74 (8). pp. 1135-1137. ISSN 0003-6951

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Ballistic electron emission spectroscopy (BEES) has been used to study both the conduction and valence band offsets between InAs and AlAsSb. With the addition of As to AlSb, the conduction band offset between it and InAs has been found to decrease despite the increase in the band gap. The resulting increase in the valence band causes the InAs/Al(As, Sb) band lineup to change from a staggered (type II) to a straddling (type I). Both room-temperature and low-temperature (77 K) BEES spectra have been taken to determine the band offsets.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Indium Compounds; Aluminium Compounds; Field Emission Electron Microscopy; Interface States; Semiconductor Heterojunctions; III-V Semiconductors; Valence Bands; Conduction Bands; Scanning Tunnelling Spectroscopy
ID Code:87522
Deposited On:19 Mar 2012 06:57
Last Modified:19 Mar 2012 06:57

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