Bhargava, S. ; Zheng, C. ; Ko, J. ; Chin, M. A. ; Coldren, L. A. ; Narayanamurti, V. (1998) Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy Applied Physics Letters, 73 (22). pp. 3271-3272. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v73/i22/p3271...
Related URL: http://dx.doi.org/10.1063/1.122741
Abstract
Ballistic electron emission spectroscopy (BEES) has been used to determine the conduction-band offset between a 10-nm-thick Al0.12In0.22Ga0.66As (Q) strained layer and a ternary Al0.2Ga0.8As (T) barrier located beneath the surface. A three-sample process was used so that the known, reproducible Au/GaAs Schottky barrier would be the top layer of all measured structures. BEES thresholds obtained for Au/GaAs, Au/GaAs/Q, and Au/GaAs/Q/T were 0.96± 0.02, 0.98± 0.04, and 1.08±0.04 meV yielding offsets of -20 meV for GaAs/Q and -100 meV for Q/T. Under the affect of a high-temperature anneal, the Q/T offset was reduced to -40 meV. In addition, a structure employing solely Au/GaAs/AlGaAs was used to study transitivity for the Q/T material system.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Aluminium Compounds; Indium Compounds; Gallium Arsenide; III-v Semiconductors; Field Emission Electron Microscopy; Conduction Bands; Semiconductor Quantum Wells; Interface States; Annealing; Schottky Barriers |
| ID Code: | 87521 |
| Deposited On: | 19 Mar 2012 06:56 |
| Last Modified: | 19 Mar 2012 06:56 |
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