Hansen, P. J. ; Strausser, Y. E. ; Erickson, A. N. ; Tarsa, E. J. ; Kozodoy, P. ; Brazel, E. G. ; Ibbetson, J. P. ; Mishra, U. ; Narayanamurti, V. ; DenBaars, S. P. ; Speck, J. S. (1998) Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition Applied Physics Letters, 72 (18). pp. 2247-2249. ISSN 0003-6951
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1063/1.121268
Abstract
A combination of atomic force microscopy and scanning capacitance microscopy was used to investigate the relationship between the surface morphology and the near-surface electrical properties of GaN films grown on c-axis sapphire substrates by metalorganic chemical vapor deposition. Local regions surrounding the surface termination of threading dislocations displayed a reduced change in capacitance with applied voltage relative to regions that contained no dislocations. Capacitance-voltage characteristics obtained from these regions indicated the presence of negative charge in the vicinity of dislocations.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 87519 |
| Deposited On: | 19 Mar 2012 12:39 |
| Last Modified: | 19 Mar 2012 12:39 |
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