Local conduction band offset of GaSb self-assembled quantum dots on GaAs

Rubin, M. E. ; Blank, H. R. ; Chin, M. A. ; Kroemer, H. ; Narayanamurti, V. (1997) Local conduction band offset of GaSb self-assembled quantum dots on GaAs Applied Physics Letters, 70 (12). pp. 1590-1592. ISSN 0003-6951

Full text not available from this repository.

Official URL: http://apl.aip.org/resource/1/applab/v70/i12/p1590...

Related URL: http://dx.doi.org/10.1063/1.118624

Abstract

GaSb self-assembled quantum dots grown by molecular beam epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small (-50 nm) lateral dot size. The nanometer resolution of ballistic electron emission microscopy is exploited to image individual dots and measure a local band offset of 0.08± 0.02 eV.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Gallium Compounds; III-V Semiconductors; Conduction Bands; Field Emission Electron Microscopy; Semiconductor Quantum Dots; Interface States
ID Code:87517
Deposited On:19 Mar 2012 06:56
Last Modified:19 Mar 2012 06:56

Repository Staff Only: item control page