Rubin, M. E. ; Blank, H. R. ; Chin, M. A. ; Kroemer, H. ; Narayanamurti, V. (1997) Local conduction band offset of GaSb self-assembled quantum dots on GaAs Applied Physics Letters, 70 (12). pp. 1590-1592. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v70/i12/p1590...
Related URL: http://dx.doi.org/10.1063/1.118624
Abstract
GaSb self-assembled quantum dots grown by molecular beam epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small (-50 nm) lateral dot size. The nanometer resolution of ballistic electron emission microscopy is exploited to image individual dots and measure a local band offset of 0.08± 0.02 eV.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Compounds; III-V Semiconductors; Conduction Bands; Field Emission Electron Microscopy; Semiconductor Quantum Dots; Interface States |
| ID Code: | 87517 |
| Deposited On: | 19 Mar 2012 06:56 |
| Last Modified: | 19 Mar 2012 06:56 |
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