Bhargava, S. ; Blank, H. -R. ; Narayanamurti, V. ; Kroemer, H. (1997) Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy Applied Physics Letters, 70 (6). pp. 759-761. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v70/i6/p759_s...
Related URL: http://dx.doi.org/10.1063/1.118271
Abstract
Ballistic electron emission microscopy (BEEM) has been used to determine the Fermi-level pinning position at the Au/InAs interface. Using BEEM's three-terminal capabilities, collector current-voltage scans were taken on Au/InAs/AlSb samples. The extracted BEEM threshold values (1.22 eV) correspond to the highest energy band position in the conduction band at the InAs/AlSb interface. By subtracting the InAs/AlSb conduction-band offset (1.35 eV), an estimate of the Au Fermi-level position on InAs is obtained (0.13 eV).
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Fermi Level; Interface States; Semiconductor-metal Boundaries; Gold; Indium Compounds; Arsenic Compounds; Electron Emission; Microscopy |
| ID Code: | 87516 |
| Deposited On: | 19 Mar 2012 06:55 |
| Last Modified: | 19 Mar 2012 06:55 |
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