Lee, E. Y. ; Bhargava, S. ; Chin, M. A. ; Narayanamurti, V. (1997) Atomic and mesoscopic scale characterization of semiconductor interfaces by ballistic electron emission microscopy Journal of Vacuum Science and Technology A, 15 (3). pp. 1351-1357. ISSN 0734-2101
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Official URL: http://avspublications.org/jvsta/resource/1/jvtad6...
Related URL: http://dx.doi.org/10.1116/1.580588
Abstract
Ballistic electron emission microscopy (BEEM) is a powerful new low energy electron microscopy in materials physics for nondestructive local electronic characterization of semiconductor heterostructures. In this article, low energy electron imaging of buried semiconductor heterostructures will be explored, with particular emphasis on BEEM imaging of buried objects in metal-GaAs based heterostructures.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to AVS (American Vacuum Society). |
| Keywords: | Gallium Arsenide; III-V Semiconductors; Semiconductor-metal Boundaries; Field Emission Electron Microscopy; Interface Structure; Electronic Structure |
| ID Code: | 87514 |
| Deposited On: | 19 Mar 2012 06:55 |
| Last Modified: | 19 Mar 2012 06:55 |
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