Measurement of heterojunction band offsets using ballistic electron emission microscopy

O'Shea, J. J. ; Sajoto, T. ; Bhargava, S. ; Leonard, D. ; Chin, M. A. ; Narayanamurti, V. (1994) Measurement of heterojunction band offsets using ballistic electron emission microscopy Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena, 12 (4). pp. 2625-2628. ISSN 0734-211X

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Official URL: http://avspublications.org/jvstb/resource/1/jvtbd9...

Related URL: http://dx.doi.org/10.1116/1.587221

Abstract

Ballistic electron emission microscopy (BEEM) has been used to study electron transport across single barrier AlxGa1-xAs/GaAs heterostructures. The structures, grown by molecular beam epitaxy, utilized a p-type δ -doped sheet to cancel the band bending near the Schottky interface, enabling a direct measurement of the conduction band offset at room temperature. The band offset at room temperature for x=0.21 is 0.19 eV and for x=0.42 is 0.33 eV. Measurements at 77 K gave values of 0.20 eV for x=0.21 and 0.35 eV for x=0.42. These results demonstrate that BEEM can be used to probe the transport properties of semiconductor heterostructures which are spatially beneath the Schottky barrier.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Heterostructures; Ternary Compounds; Aluminium Arsenides; Gallium Arsenides; Beryllium Additions; Molecular Beam Epitaxy; Transport Processes; Electron Microscopy; Band Structure; Conduction Bands; Ambient Temperature; Temperature Range 65-273 K
ID Code:87508
Deposited On:19 Mar 2012 06:53
Last Modified:19 Mar 2012 06:53

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