O'Shea, J. J. ; Sajoto, T. ; Bhargava, S. ; Leonard, D. ; Chin, M. A. ; Narayanamurti, V. (1994) Measurement of heterojunction band offsets using ballistic electron emission microscopy Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena, 12 (4). pp. 2625-2628. ISSN 0734-211X
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Official URL: http://avspublications.org/jvstb/resource/1/jvtbd9...
Related URL: http://dx.doi.org/10.1116/1.587221
Abstract
Ballistic electron emission microscopy (BEEM) has been used to study electron transport across single barrier AlxGa1-xAs/GaAs heterostructures. The structures, grown by molecular beam epitaxy, utilized a p-type δ -doped sheet to cancel the band bending near the Schottky interface, enabling a direct measurement of the conduction band offset at room temperature. The band offset at room temperature for x=0.21 is 0.19 eV and for x=0.42 is 0.33 eV. Measurements at 77 K gave values of 0.20 eV for x=0.21 and 0.35 eV for x=0.42. These results demonstrate that BEEM can be used to probe the transport properties of semiconductor heterostructures which are spatially beneath the Schottky barrier.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Heterostructures; Ternary Compounds; Aluminium Arsenides; Gallium Arsenides; Beryllium Additions; Molecular Beam Epitaxy; Transport Processes; Electron Microscopy; Band Structure; Conduction Bands; Ambient Temperature; Temperature Range 65-273 K |
| ID Code: | 87508 |
| Deposited On: | 19 Mar 2012 06:53 |
| Last Modified: | 19 Mar 2012 06:53 |
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