Shanavas, K. V. ; Ojha, Udbhav ; Garg, Nandini ; Sharma, Surinder M. (2010) Classical molecular dynamics study on crystallization of amorphous silicon American Institute of Physics Conference Proceedings, 1313 . pp. 382-384. ISSN 0094-243X
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Official URL: http://proceedings.aip.org/resource/2/apcpcs/1313/...
Related URL: http://dx.doi.org/10.1063/1.3530553
Abstract
Crystallization of amorphous silicon to diamond structure under high pressures is studied with the help of classical molecular dynamics simulations, for the first time. We find that, as pressure is increased, the crystallization temperature decreases up to 10 GPa and then begins to increase. Beyond 15 GPa crystallization is not observed and the system transforms to a denser amorphous phase (HDA). Gradual densification and increase of coordination in the amorphous phase can explain the observed crystallization curve.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
Keywords: | Crystallisation; Amorphous Magnetic Materials; Molecular Dynamics Method; Crystal Structure |
ID Code: | 81886 |
Deposited On: | 09 Feb 2012 04:50 |
Last Modified: | 09 Feb 2012 04:50 |
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