Theory of tunneling conductance of graphene normal metal-insulator-superconductor junctions

Abstract

We calculate the tunneling conductance of a graphene normal metal-insulator-superconductor (NIS) junction with a barrier of thickness d and with an arbitrary voltage V₀ applied across the barrier region. We demonstrate that the tunneling conductance of such a NIS junction is an oscillatory function of both d and V₀. We also show that the periodicity and amplitude of such oscillations deviate from their universal values in the thin barrier limit as obtained in an earlier work [ S. Bhattacharjee and K. Sengupta Phys. Rev. Lett. 97 217001 (2006)] and become a function of the applied voltage V₀. Our results reproduce the earlier results on tunneling conductance of such junctions in the thin [ S. Bhattacharjee and K. Sengupta Phys. Rev. Lett. 97 217001 (2006)] and zero [ C. W. J. Beenakker Phys. Rev. Lett. 97 067007 (2006)] barrier limits as special limiting cases. We discuss the experimental relevance of our results.