Bhattacharjee, Subhro ; Sengupta, K. (2006) Tunneling conductance of graphene NIS junctions Physical Review Letters, 97 (21). 217001_1-217001_4. ISSN 0031-9007
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Official URL: http://prl.aps.org/abstract/PRL/v97/i21/e217001
Related URL: http://dx.doi.org/10.1103/PhysRevLett.97.217001
Abstract
We show that, in contrast with conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations is maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for a large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.
Item Type: | Article |
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Source: | Copyright of this article belongs to The American Physical Society. |
ID Code: | 81679 |
Deposited On: | 07 Feb 2012 06:15 |
Last Modified: | 18 May 2016 23:08 |
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