Hapase, M. G. ; Tare, V. B. ; Biswas, A. B. (1967) Oxidation of bismuth Acta Metallurgica, 15 (1). pp. 131-133. ISSN 0001-6160
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0001-6160(67)90160-5
Abstract
The oxidation of vacuum deposited bismuth films at 30 mm of oxygen pressure in the temperature range 175-250°C has been studied. The kinetic data fits in well with the parabolic law. The ionic and electronic transport numbers were determined by measuring the e.m.f. of the cell Bi¦Bi2O3¦O2(g), Ag at 250°C and 30 mm O2 pressure. Using these data the rate of oxidation at 250°C has been calculated according to Wagner's equation. An agreement of this Kρ= 2.3 × 10-13g2/cm4/sec with the experimentally observed value (Kp = 1.7 × 10-13g2cm4/sec) supports the Wagner's mechanism.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 81112 |
| Deposited On: | 04 Feb 2012 07:38 |
| Last Modified: | 04 Feb 2012 07:38 |
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