Ramgopal Rao, V. ; Hansch, W. ; Eisele, I. (1997) Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs Technical Digest - International Electron Devices Meeting . pp. 811-814. ISSN 0163-1918
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/IEDM.1997.650505
Abstract
In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to IEEE. |
| ID Code: | 80946 |
| Deposited On: | 02 Feb 2012 14:26 |
| Last Modified: | 02 Feb 2012 14:26 |
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