Kumar, D. V. ; Thakker, R. A. ; Patil, M. B. ; Rao, V. R. (2002) Simulation study of non-quasi static behaviour of MOS transistors Proceedings of the 5th International Conference on Modeling and Simulation of Microsystems, San Juan, Puerto Rico, 1 . pp. 742-745.
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Official URL: http://www.nsti.org/procs/MSM2002/13/W41.04
Abstract
In this paper, we study the 'non-quasi static' (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT) [1] MOSFET model implemented in a general-purpose circuit simulator SEQUEL [2], device simulator ISE-TCAD [3] and SPICE BSIM3v3 [4] QS and NQS models. An NMOS transistor of channel length 2 um is simulated using LUT, ISE and SPICE3 and terminal currents are qualitatively studied. The method for extraction of terminal charges, which are required for circuit simulation using the LUT approach also presented.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 5th International Conference on Modeling and Simulation of Microsystems, San Juan, Puerto Rico. |
| Keywords: | Look-up Table; Non-quasi-static Model; Terminal Charges; MOSFET; Circuit Simulation |
| ID Code: | 80938 |
| Deposited On: | 02 Feb 2012 14:28 |
| Last Modified: | 02 Feb 2012 14:28 |
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