Manoj, C. R. ; Nagpal, M. ; Ramgopal Rao, V. (2007) Improving the DC performance of Bulk FinFETs by optimum body doping Proceedings of the 14th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Bangalore, India . pp. 180-184.
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/IPFA.2007.4378080
Abstract
It is shown that body doping can be used to match the Bulk FinFETs' DC performance with that of SOI FinFETs, even down to 22 nm technology node, by using calibrated full 3D device simulations. However higher body doping does not necessarily mean better performance always as there is a optimum body doping. The optimum doping should be carefully chosen such that device exhibits no punch through and no BTBT leakage currents. Thus careful body doping optimization is critical for the reliable device operation of novel Bulk FinFET structures.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 14th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Bangalore, India. |
| ID Code: | 80935 |
| Deposited On: | 02 Feb 2012 14:28 |
| Last Modified: | 02 Feb 2012 14:28 |
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