Bhise, Ashok B. ; Late, Dattatray J. ; Walke, Pravin ; More, Mahendra A. ; Mulla, Imtiaz S. ; Pillai, Vijayamohanan K. ; Joag, Dilip S. (2007) A single In-doped SnO2 submicrometre sized wire as a field emitter Journal of Physics D: Applied Physics, 40 (12). pp. 3644-3648. ISSN 0022-3727
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Official URL: http://iopscience.iop.org/0022-3727/40/12/013
Related URL: http://dx.doi.org/10.1088/0022-3727/40/12/013
Abstract
Indium doped tin oxide submicrometre sized wires have been synthesized by thermal evaporation and characterized by field emission (FE) microscopy. The non-linear Fowler-Nordheim plot corresponds to the typical semiconducting behaviour of the emitter. The field enhancement factor has been estimated to be 29 900 cm-1 indicating that electron emission is due to the nanometric features of the emitter. A current density of the order of 6.36×103 A cm-2 with an applied electric field of 1×104 V μm-1 has been obtained. The long term FE current stability tested at the preset current level of 1 μA exhibits no severe fluctuations.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| Keywords: | Charge Transport; Metal Complexation; Metal-organic Materials; Nanoclusters; Nanoparticles; Metal |
| ID Code: | 80408 |
| Deposited On: | 31 Jan 2012 14:16 |
| Last Modified: | 31 Jan 2012 14:16 |
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