Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass

Anbarasu, M. ; Asokan, S. ; Prusty, Sudakshina ; Sood, A. K. (2007) Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass Applied Physics Letters, 91 (9). 093520_1-093520_3. ISSN 0003-6951

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Official URL: http://link.aip.org/link/?APPLAB/91/093520/1

Related URL: http://dx.doi.org/10.1063/1.2770770

Abstract

Bulk Ge15Te83Si2 glass has been found to exhibit memory-type switching for 1 mA current with a threshold electric field of 7.3 kV/cm. The electrical set and reset processes have been achieved with triangular and rectangular pulses, respectively, of 1 mA amplitude. In situ Raman scattering studies indicate that the degree of disorder in Ge15Te83Si2 glass is reduced from off to set state. The local structure of the sample under reset condition is similar to that in the off state. The Raman results are consistent with the switching results which indicate that the Ge15Te83Si2 glass can be set and reset easily.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Chalcogenide Glasses; Germanium Compounds; Raman Spectra; Silicon Compounds; Switching; Tellurium Compounds
ID Code:79887
Deposited On:30 Jan 2012 05:03
Last Modified:30 Jan 2012 05:03

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