Mahapatra, S. ; Manjularani, K. N. ; Ramgopal Rao, V. ; Vasi, J. (2000) ULSI MOS transistors with jet vapour deposited (JVD) silicon nitride for the gate insulator SPIE Proceedings Series, 3975 (2). pp. 803-810. ISSN 1017-2653
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Abstract
As metal-oxide-semiconductor (MOS) transistors scale down, the thickness of the gate oxide must eventually scale to 1-2 nm. For such thin insulators, silicon dioxide poses problems of direct tunneling. This can be ameliorated by the use of jet vapour deposited (JVD) silicon nitride, which shows excellent electrical properties. This paper reviews the characteristics of JVD nitrides and MOS devices made with them. The paper also presents some new results obtained on 100 nm channel length MOS transistors using JVD nitrides, including the hot-carrier performance of such devices.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The International Society for Optical Engineering. |
| ID Code: | 79798 |
| Deposited On: | 28 Jan 2012 11:43 |
| Last Modified: | 28 Jan 2012 11:43 |
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