Mohapatra, N. R. ; Mahapatra, S. ; Ramgopal Rao, V. (2001) Study of degradation in channel in initiated secondary electron injection regime Proceedings of the 31st European Solid-State Device Research Conference (ESSDERC), Nuremberg, Germany . pp. 291-294.
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Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Related URL: http://dx.doi.org/10.1109/ESSDERC.2001.195258
Abstract
This paper analyzes the Channel Initiated Secondary Electron injection mechanism and the resulting hot-carrier degradation in deep sub-micron n-channel MOSFETs. The correlation between gate (IG) and substrate current (IB) has been studied for different values of substrate bias. Stress and charge pumping measurements have been carried out to study the degradation under identical substrate bias and gate current conditions. Results show that under identical gate current (programming time for flash memory cells), the degradation is less for higher negative substrate bias.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 31st European Solid-State Device Research Conference (ESSDERC), Nuremberg, Germany. |
| ID Code: | 79787 |
| Deposited On: | 28 Jan 2012 11:45 |
| Last Modified: | 28 Jan 2012 11:45 |
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